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BAS40

Description
0.2 A, 40 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size96KB,2 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
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BAS40 Overview

0.2 A, 40 V, SILICON, SIGNAL DIODE

BAS40 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerComchip Technology
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.38 V
Maximum non-repetitive peak forward current0.2 A
Number of components1
Maximum operating temperature150 °C
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
Surface Mount Schottky Diode
COMCHIP
www.comchip.com.tw
BAS40 Thru BAS40-06
Voltage: 40 Volts
Power: 200mW
Features
Low Turn-on Voltage
Low Forward Voltage - 0.5V(Max) @ IF = 30 mA
Very Low Capacitance - Less Than 5.0pF @ 1V
For high speed switching application, circuit
protection
SOT-23
.119 (3.0)
.110 (2.8)
.020 (0.5)
Top View
.056 (1.40)
.047 (1.20
)
Mechanical data
Case: SOT-23, Molded Plastic
Weight: 0.008 grams (approx.)
Mounting Position: Any
1
3
2
.006 (0.15)max.
BAS40
3
BAS40-04
1
2
CATHODE
ANODE
2
CATHODE
CATHODE
ANODE
CATHODE
ANODE
1
ANODE
1
2
CATHODE
3
CATHODE
3
2
ANODE
.020 (0.5)
.020 (0.5)
.103 (2.6)
.086 (2.2)
BAS40-05
BAS40-06
Dimensions in inches (millimeters)
Maximum Ratings and Thermal
Characteristics
(TA = 25°C unless
otherwise noted)
Rating
Repetitive Peak Reverse Voltage
Forward Continuous Current at Tamb = 25°C
Surge Forward Current at tp < 1 s, Tamb = 25°C
Power Dissipation(1) at Tamb = 25°C
Thermal Resistance Junction to Ambiant Air
Junction Temperature
Storage Temperature Range
Symbol
V
RRM
I
F
I
FSM
P
tot
R
thJA
T
j
T
S
Value
40
200(1)
600(1)
200(1)
430(1)
150
–55 to +150
Units
V
mA
mA
mW
°C/W
°C
°C
Electrical Characterics
(TA = 25°C unless otherwise noted)
Parameter
Reverse Breakdown Voltage
Leakage Current
Forward Voltage
Capacitance
Reverse Recovery Time
Note: (1) Device on fiberglass substrate, see layout
on next page.
Symbol
V(BR)R
IR
VF
Ctot
Trr
Test Condition
IR =10µA (pulsed)
Pulse Test tp < 300µs
VR = 30V
Pulse Test tp < 300µs
IF = 1mA
IF = 40mA
VR = 0V
f = 1MHz
IF = 10mA, IR = 10mA
Irr = 1mA, RL = 100
Min
40.0
-
-
-
-
-
Typ
-
20
-
-
40
-
Max
-
100.0
380
1000
5
5
.044 (1.10)
.035 (0.90)
3
.006 (0.15)
.002 (0.05)
ANODE
ANODE
1
.037(0.95) .037(0.95)
Units
V
nA
mV
mV
pF
nS
MDS0211002A
Page 1

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BAS40 BAS40-04
Description 0.2 A, 40 V, SILICON, SIGNAL DIODE 0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Is it Rohs certified? incompatible incompatible
Maker Comchip Technology Comchip Technology
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.38 V 0.38 V
Maximum operating temperature 150 °C 150 °C
Maximum repetitive peak reverse voltage 40 V 40 V
surface mount YES YES
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