BAS 40-07W
Silicon Schottky Diode
Preliminary data
•
General-purpose diode for high-speed switching
•
Circuit protection
•
Voltage clamping
•
High-level detecting and mixing
•
Available with CECC quality assessment
3
4
2
1
VPS05605
BAS 40-07W
Type
BAS 40-07W
Marking Ordering Code
47s
Q62702-
Pin Configuration
1=C1
2=C2
3=A2
4=A1
Package
SOT-343
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Surge forward current,
t
≤
10ms
Total power dissipation,
T
S
≤
81°C
Junction temperature
Operating temperature range
Storage temperature
Symbol
Value
40
120
200
250
150
- 55 ...+150
- 55 ...+150
mW
°C
Unit
V
mA
V
R
I
F
I
FSM
P
tot
T
j
T
op
T
stg
Maximum Ratings
Junction - ambient
1)
R
thJA
R
thJS
≤
345
≤
275
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
Semiconductor Group
Semiconductor Group
1
1
Sep-09-1998
1998-11-01
BAS 40-07W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
DC characteristics
Breakdown voltage
Symbol
min.
Values
typ.
-
max.
-
V
µA
-
-
-
-
310
450
720
1
10
mV
-
-
-
380
500
1000
Unit
V
(BR)
I
R
40
I
(BR)
= 10 µA
Reverse current
V
R
= 30 V
V
R
= 40 V
Forward voltage
V
F
I
F
= 1 mA
I
F
= 10 mA
I
F
= 40 mA
AC characteristics
Diode capacitance
C
T
τ
-
-
-
4
-
10
5
100
-
pF
ps
Ω
V
R
= 0 V,
f
= 1 MHz
Charge carrier life time
I
F
= 25 mA
Differential forward resistance
r
f
I
F
= 10 mA,
f
= 10 kHz
Semiconductor Group
Semiconductor Group
2
2
Sep-09-1998
1998-11-01
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