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CY7C1442AV25-250BZXI

Description
1M X 36 CACHE SRAM, 3.4 ns, PBGA165
Categorystorage   
File Size604KB,33 Pages
ManufacturerCypress Semiconductor
Download Datasheet Parametric View All

CY7C1442AV25-250BZXI Overview

1M X 36 CACHE SRAM, 3.4 ns, PBGA165

CY7C1442AV25-250BZXI Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals165
Maximum operating temperature70 Cel
Minimum operating temperature0.0 Cel
Maximum supply/operating voltage2.62 V
Minimum supply/operating voltage2.38 V
Rated supply voltage2.5 V
maximum access time3.4 ns
Processing package description15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-165
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeGRID ARRAY, LOW PROFILE
surface mountYes
Terminal formBALL
Terminal spacing1 mm
terminal coatingTIN SILVER COPPER
Terminal locationBOTTOM
Packaging MaterialsPLASTIC/EPOXY
Temperature levelCOMMERCIAL
memory width36
organize1M X 36
storage density3.77E7 deg
operating modeSYNCHRONOUS
Number of digits1.05E6 words
Number of digits1M
Memory IC typeCACHE SRAM
serial parallelPARALLEL
CY7C1440AV25
CY7C1446AV25
36-Mbit (1 M × 36/512 K × 72)
Pipelined Sync SRAM
36-Mbit (1 M × 36/512 K × 72) Pipelined Sync SRAM
Features
Functional Description
The
CY7C1440AV25/CY7C1446AV25 SRAM
integrates
1 M × 36/512 K × 72 SRAM cells with advanced synchronous
peripheral circuitry and a two-bit counter for internal burst
operation. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered Clock Input (CLK). The
synchronous inputs include all addresses, all data inputs,
address-pipelining Chip Enable (CE
1
), depth-expansion Chip
Enables (CE
2
and CE
3
), Burst Control inputs (ADSC, ADSP, and
ADV), Write Enables (BW
X
, and BWE), and Global Write (GW).
Asynchronous inputs include the Output Enable (OE) and the ZZ
pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or Address
Strobe Controller (ADSC) are active. Subsequent burst
addresses can be internally generated as controlled by the
Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to two or four bytes wide as
controlled by the byte write control inputs. GW when active LOW
causes all bytes to be written.
The CY7C1440AV25/CY7C1446AV25 operates from a +2.5 V
core power supply while all outputs may operate with a +2.5 V
supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
For a complete list of related documentation, click
here.
Supports bus operation up to 250 MHz
Available speed grades are 250 and 167 MHz
Registered inputs and outputs for pipelined operation
2.5 V core power supply
2.5 V power supply
Fast clock-to-output times
2.6 ns (for 250-MHz device)
Provide high-performance 3-1-1-1 access rate
User-selectable burst counter supporting Intel
Pentium
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed writes
Asynchronous output enable
Single-cycle Chip Deselect
CY7C1440AV25 available in Pb-free and non-Pb-free 165-ball
FBGA package. CY7C1446AV25 available in non-Pb-free
209-ball FBGA package
IEEE 1149.1 JTAG-Compatible Boundary Scan
“ZZ” Sleep Mode Option
Selection Guide
Description
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
250 MHz
2.6
435
120
167 MHz
3.4
335
120
Unit
ns
mA
mA
Cypress Semiconductor Corporation
Document Number: 001-70167 Rev. *E
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised January 5, 2016
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