LSU406
LOW NOISE, LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U406 with LSU406
The U406/ LSU406 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET
The LSU406 is a high-performance monolithic dual
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The LSU406 features a 5-
mV offset and 10-µV/°C drift. The LSU406 is a direct
replacement for discontinued Siliconix U406.
The hermetically sealed TO-71 & TO-78 packages are
well suited for military applications. The 8 Pin P-DIP
and 8 Pin SOIC provide ease of manufacturing, and the
symmetrical pinout prevents improper orientation.
(See Packaging Information).
FEATURES
LOW DRIFT
LOW NOISE
LOW PINCHOFF
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
| V
GS1‐2
/ T| = 10µV/°C TYP.
e
n
= 6nV/Hz @ 10Hz TYP.
V
p
= 2.5V TYP.
U406 / LSU406 Applications:
Wideband Differential Amps
High-Speed,Temp-Compensated Single-Ended
Input Amps
High-Speed Comparators
Impedance Converters and vibrations detectors.
Maximum Temperatures
Storage Temperature
‐65°C to +150°C
Operating Junction Temperature
+150°C
Maximum Voltage and Current for Each Transistor – Note 1
‐V
GSS
Gate Voltage to Drain or Source
50V
‐V
DSO
Drain to Source Voltage
50V
‐I
G(f)
Gate Forward Current
10mA
Maximum Power Dissipation
Device Dissipation @ Free Air – Total 300mW
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTICS VALUE UNITS CONDITIONS
| V
GS1‐2
/ T| max.
DRIFT VS.
80
µV/°C V
DG
=10V, I
D
=200µA
TEMPERATURE
T
A
=‐55°C to +125°C
| V
GS1‐2
| max.
OFFSET VOLTAGE
40
mV
V
DG
=10V, I
D
=200µA
TYP.
60
‐‐
‐‐
‐‐
0.6
‐‐
1
‐‐
‐‐
‐4
‐‐
‐‐
5
‐‐
0.2
‐‐
‐‐
20
‐‐
‐‐
MAX.
‐‐
‐‐
7000
2000
3
10
5
‐2.5
‐2.3
‐15
‐10
100
5
20
2
‐‐
0.5
‐‐
8
1.5
UNITS
V
V
µmho
µmho
%
mA
%
V
V
pA
nA
pA
pA
µmho
µmho
dB
dB
nV/Hz
pF
pF
CONDITIONS
V
DS
= 0 I
D
=1nA
I
G
= 1nA I
D
= 0 I
S
= 0
V
DG
= 10V V
GS
= 0V f = 1kHz
V
DG
= 15V I
D
= 200µA f = 1kHz
V
DG
= 10V V
GS
= 0V
V
DS
= 15V I
D
= 1nA
V
DS
=15V I
D
=200µA
V
DG
= 15V I
D
= 200µA
T
A
= +125°C
V
DS
=0
V
DG
= 15V T
A
= +125°C
V
DG
= 10V V
GS
= 0V
V
DG
= 15V I
D
= 500µA
V
DS
= 10 to 20V I
D
=30µA
V
DS
= 15V V
GS
= 0V R
G
= 10M
f= 100Hz NBW= 6Hz
V
DS
=15V I
D
=200µA f=10Hz NBW=1Hz
V
DS
= 15V I
D
= 200µA f= 1MHz
P-DIP / SOIC (Top View)
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BV
GSS
Breakdown Voltage
50
BV
GGO
Gate‐To‐Gate Breakdown
±50
TRANSCONDUCTANCE
Y
fSS
Full Conduction
2000
Y
fS
Typical Operation
1000
|Y
FS1‐2
/ Y
FS
|
Mismatch
‐‐
DRAIN CURRENT
I
DSS
Full Conduction
0.5
|I
DSS1‐2
/ I
DSS
|
Mismatch at Full Conduction
‐‐
GATE VOLTAGE
V
GS
(off) or V
p
Pinchoff voltage
‐0.5
V
GS
(on)
Operating Range
‐‐
GATE CURRENT
‐I
G
max.
Operating
‐‐
‐I
G
max.
High Temperature
‐‐
‐I
GSS
max.
At Full Conduction
‐‐
‐I
GSS
max.
High Temperature
5
OUTPUT CONDUCTANCE
Y
OSS
Full Conduction
‐‐
Y
OS
Operating
‐‐
COMMON MODE REJECTION
CMR
‐20 log | V
GS1‐2
/ V
DS
|
95
NOISE
NF
Figure
‐‐
e
n
Voltage
‐‐
CAPACITANCE
C
ISS
Input
‐‐
C
RSS
Reverse Transfer
‐‐
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
Available Packages:
U406 / LSU406 in TO-71 & TO-78
U406 / LSU406 in PDIP & SOIC
U406 / LSU406 available as bare die
Please contact Micross for full package and die dimensions
TO-71 / TO-78 (Top View)
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
baredie@micross.com
Web:
www.micross.com/distribution.aspx
京公网安备 11010802033920号
EEWORLD
