BAS56 datasheet, PDF - EEWORLD Datasheet

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BAS56: Description0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size66KB，2 Pages; ManufacturerCentral Semiconductor

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0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE

BAS56 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	R-PDSO-G4
Contacts	4
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	FAST SWITCHING
Shell connection	CATHODE
Configuration	SEPARATE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Number of components	2
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.35 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	60 V
Maximum reverse current	0.1 µA
Maximum reverse recovery time	0.006 µs
Reverse test voltage	60 V
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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BAS56

DUAL HIGH CURRENT

SWITCHING DIODE

Central

DESCRIPTION:

Semiconductor Corp.

SOT-143 CASE

MAXIMUM RATINGS

(TA=25

The CENTRAL SEMICONDUCTOR BAS56

type is an ultra-high speed silicon switching

diode manufactured by the epitaxial planar

process, in an epoxy molded surface mount

package with isolated dual diodes, designed

for high current, high speed switching

applications.

Marking code is L51.

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current

Forward Surge Current, tp=1

µsec.

Forward Surge Current, tp=1 sec.

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

SYMBOL

VRRM

IFRM

IFSM

TJ,Tstg

200

600

4000

1000

350

-65 to +150

357

UNITS

C/W

ELECTRICAL CHARACTERISTICS

(TA=25

C unless otherwise noted)

SYMBOL

trr

VFR

TEST CONDITIONS

MIN

VR=60V

VR=60V, TA=150

VR=75V

IF=10mA

IF=200mA

IF=500mA

VR=0, f=1 MHz

IF=IR=400mA, RL=100Ω, Rec. to 40mA

IF=10mA, VR=5.0V, RL=500Ω

IF=400mA, tr=30ns

IF=400mA, tr=100ns

MAX

100

0.75

1.00

1.25

2.5

6.0

1.2

1.5

UNITS

µA

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