ADVANCE TECHNICAL INFORMATION
DGSS 10-05C
I
DC
= 9A
V
RRM
= 500 V
C
JUNCTION
= 18 pF
Gallium Arsenide Schottky Diode
ISOPLUS220
TM
Electrically Isolated Back Surface
V
RRM
Q
V
500
V
RRM
V
250
Type
ISOPLUS220
TM
1
DGSS 10-025C
1
2
3
2
3
Isolated back surface *
Symbol
I
DC
I
FAV
I
FSM
T
VJ
T
stg
P
tot
V
ISOL
F
C
Weight
Conditions
T
C
= 25°C
T
C
= 90°C; 50% Duty cycle; Square wave
T
VJ
= 25°C; t
p
= 10 ms, sine
Maximum Ratings
9
6
30
-55...+175
-55...+150
A
A
A
°C
°C
W
V~
g
* Patent pending
Features
l
T
C
= 25°C
50/60 Hz RMS; I
ISOL
≤
1 mA
Mounting force
typical
30
2500
2
l
l
l
l
11...65 / 2.4...11 N / lb
l
l
Symbol
I
R
Q
V
F
R
C
J
R
thJC
R
thCH
Conditions
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 150°C V
R
= V
RRM
I
F
= 7.5 A;
I
F
= 7.5 A;
T
VJ
= 25°C
T
VJ
= 125°C
Characteristic Values
typ.
max.
1.3
6
1.2
1.3
18
5
0.6
1.5
mA
mA
V
V
pF
K/W
K/W
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low forward voltage
Very high switching speeds
Soft reverse recovery
Temperature independent switching
behaviour
High temperature operation capability
Low cathode to tab capacitance (<15pF)
Epoxy meets UL 94V-0
Applications
Switched mode power supplies
(SMPS)
High frequency converters
Resonant converters
l
l
l
V
R
= 100 V; T
VJ
= 125°C
See DGS10-025A data sheet for
characteristic curves
Notes: Data given for T
VJ
= 25
O
C and per diode unless otherwise specified
Q
Diodes connected in series
R
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
S
Pulse test: pulse Width = 300
µs,
Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
98868 (12/01)
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