Trench
TM
Power MOSFET
IXTA60N20T
IXTP60N20T
IXTQ60N20T
V
DSS
I
D25
R
DS(on)
= 200V
= 60A
≤
40mΩ
Ω
TO-263 AA (IXTA)
N-Channel Enhancement Mode
For PDP Drivers
Avalanche Rated
G
S
D (Tab)
TO-220AB (IXTP)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
sold
M
d
Weight
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque (TO-220 &TO-3P)
TO-263
TO-220
TO-3P
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
200
200
±20
±30
60
150
30
700
500
-55 ... +175
175
-55 ... +175
300
260
1.13 / 10
2.5
3.0
5.5
V
V
V
V
A
A
A
mJ
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
G
D
S
G = Gate
S = Source
D (Tab)
D
= Drain
Tab = Drain
G
DS
D (Tab)
TO-3P (IXTQ)
Features
High Current Handling Capability
175°C Operating Temperature
Avalanche Rated
Fast Intrinsic Rectifier
Low R
DS(on)
Advantages
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 250μA
V
GS
=
±
20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 150°C
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min. Typ.
Max.
200
3.0
5.0
V
V
Easy to Mount
Space Savings
High Power Density
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
±200
nA
1
μA
250
μA
32
40 mΩ
© 2010 IXYS CORPORATION, All Rights Reserved
DS99359B(7/10)
IXTA60N20T IXTP60N20T
IXTQ60N20T
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
R
thCS
TO-220
TO-3P
0.50
0.25
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 10Ω
(External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min. Typ.
Max.
40
62
4530
490
72
22
13
33
22
73
22
22
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.30 °C/W
°C/W
°C/W
Pins:
1 - Gate
3 - Source
2 - Drain
TO-220 (IXTP) Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 60A, V
GS
= 0V, Note 1
I
F
= 0.5 • I
D25
, V
GS
= 0V
-di/dt = 100A/μs
V
R
= 85V
118
9.3
550
Characteristic Values
Min. Typ.
Max.
60
240
1.3
A
A
V
ns
A
nC
TO-3P (IXTQ) Outline
Note
1.
Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
TO-263 (IXTA) Outline
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
Millimeter
Min.
Max.
4.06
0.51
1.14
0.40
1.14
8.64
8.00
9.65
6.22
2.54
14.61
2.29
1.02
1.27
0
4.83
0.99
1.40
0.74
1.40
9.65
8.89
10.41
8.13
BSC
15.88
2.79
1.40
1.78
0.13
Inches
Min. Max.
.160
.020
.045
.016
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.190
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.005
1.
2.
3.
4.
Gate
Collector
Emitter
Collector
Bottom Side
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA60N20T IXTP60N20T
IXTQ60N20T
Fig. 1. Output Characteristics @ T
J
= 25ºC
60
V
GS
= 15V
10V
8V
7V
200
180
160
140
V
GS
= 15V
10V
8V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
50
I
D
- Amperes
I
D
- Amperes
40
120
7V
100
80
60
6V
40
30
6V
20
10
5V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
20
5V
0
0
2
4
6
8
10
12
14
16
18
20
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 150ºC
60
V
GS
= 15V
10V
7V
3.4
3.0
2.6
Fig. 4. R
DS(on)
Normalized to I
D
= 30A Value vs.
Junction Temperature
V
GS
= 10V
50
R
DS(on)
- Normalized
40
I
D
= 60A
2.2
I
D
= 30A
1.8
1.4
1.0
0.6
I
D
- Amperes
6V
30
20
5V
10
4V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.2
-50
-25
0
25
50
75
100
125
150
175
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 30A Value vs.
Drain Current
5.0
4.5
4.0
V
GS
= 10V
T
J
= 175ºC
70
60
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
50
3.5
I
D
- Amperes
180
200
3.0
2.5
2.0
1.5
1.0
0.5
0
20
40
60
80
100
120
140
160
T
J
= 25ºC
40
30
20
10
0
-50
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
© 2010 IXYS CORPORATION, All Rights Reserved
IXTA60N20T IXTP60N20T
IXTQ60N20T
Fig. 7. Input Admittance
120
120
T
J
= - 40ºC
Fig. 8. Transconductance
100
100
g
f s
- Siemens
80
80
I
D
- Amperes
60
T
J
= 150ºC
25ºC
- 40ºC
25ºC
60
150ºC
40
40
20
20
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
0
20
40
60
80
100
120
140
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
180
160
140
120
10
9
8
7
V
DS
= 100V
I
D
= 30A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
100
80
60
40
20
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
T
J
= 150ºC
V
GS
- Volts
T
J
= 25ºC
6
5
4
3
2
1
0
0
10
20
30
40
50
60
70
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
1.00
Fig. 12. Maximum Transient Thermal Impedance
Ciss
Capacitance - PicoFarads
Z
(th)JC
- ºC / W
1,000
Coss
100
Crss
0.10
f
= 1 MHz
10
0
5
10
15
20
25
30
35
40
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
- Volts
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_60N20T(5G)02-10-10
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
Embedded System
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