BAS70 THRU BAS70-06
Schottky Diodes
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
FEATURES
♦
These diodes feature very low turn-on
Top View
.056 (1.43
)
.052 (1.33
)
voltage and fast switching.
♦
These devices are protected by a PN
1
2
max. .004 (0.1)
junction guard ring against excessive
voltage, such as electrostatic dis-
charges.
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
MECHANICAL DATA
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
3
Dimensions in inches and (millimeters)
3
Top View
1
2
1
2
BAS70
Marking: 73
3
BAS70-04
Marking: 74
3
Top View
1
2
1
2
BAS70-05
Marking: 75
BAS70-06
Marking: 76
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR ONE DIODE
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Repetitive Peak Reverse Voltage
Forward Continuous Current at T
amb
= 25 °C
Surge Forward Current at t
p
< 1 s, T
amb
= 25 °C
Power Dissipation
1)
at T
amb
= 25 °C
Junction Temperature
Storage Temperature Range
1)
Value
70
200
1)
600
1)
200
1)
150
–55 to +150
Unit
V
mA
mA
mW
°C
°C
V
RRM
I
F
I
FSM
P
tot
T
j
T
S
Device on fiberglass substrate, see layout
4/98
BAS70 THRU BAS70-06
ELECTRICAL CHARACTERISTICS
Ratings for one diode at 25 °C ambient temperature unless otherwise specified
Symbol
Reverse Breakdown Voltage
Tested with 10
µA
Pulses
Leakage Current
Pulse Test t
p
< 300
µs
at V
R
= 50 V
Forward Voltage
Pulse Test t
p
< 300
µs
at I
F
= 1 mA
at I
F
= 15 mA
Capacitance
at V
R
= 0 V, f = 1 MHz
Reverse Recovery Time
from I
F
= 10 mA through I
R
= 10 mA to I
R
= 1 mA
Thermal Resistance Junction to Ambient Air
1)
Min.
70
–
Typ.
–
20
Max.
–
100
Unit
V
nA
V
(BR)R
I
R
V
F
V
F
C
tot
t
rr
R
thJA
–
–
–
–
–
–
–
1.5
–
–
410
1000
2
5
430
1)
mV
mV
pF
ns
K/W
Device on fiberglass substrate, see layout
.30 (7.5)
.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
.59 (15)
.47 (12)
.03 (0.8)
0.2 (5)
.06 (1.5)
.20 (5.1)
Dimensions in inches (millimeters)
Layout for R
thJA
test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
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