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BAS70

Description
0.2 A, 70 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size75KB,4 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BAS70 Overview

0.2 A, 70 V, SILICON, SIGNAL DIODE

BAS70 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSIEMENS
package instructionR-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.41 V
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Maximum non-repetitive peak forward current0.1 A
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.07 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage70 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
HiRel
Silicon Schottky Diode
Features
¥
¥
¥
¥
¥
¥
¥
¥
HiRel
Discrete and Microwave Semiconductor
General-purpose diodes for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
Hermetically sealed microwave package
qualified
ESA/SCC Detail Spec. No.: 5512/020
BAS 70
T1
ESD: E
lectro
s
tatic
d
ischarge sensitive device, observe handling precautions!
Type
BAS70-T1 (ql)
Marking
-
Ordering Code
see below
Pin Configuration
Package
T1
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702A1173
H: High Rel Quality,
S: Space Quality,
Ordering Code: on request
Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702A674
(see
Chapter Order Instructions
for ordering example)
Table 1
Parameter
Reverse voltage
Forward current
Surge forward current
1)
Power dissipation
Operating temperature range
Storage temperature range
Soldering temperature
Junction temperature
Thermal resistance junction-case
1)
Maximum Ratings
Symbol
Limit Values
70
70
85
250
-
55 to + 150
-
65 to + 150
+ 250
150
100
Unit
V
mA
mA
mW
°
C
°
C
°
C
°
C
K/W
V
R
I
F
I
FSM
P
tot
T
op
T
stg
T
sol
T
j
R
th(j-c)
t
£
10 ms, duty cycle = 10
%
Semiconductor Group
1
Draft A03 1998-04-01

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surface mount YES - Yes Yes
Terminal form GULL WING - GULL WING GULL WING
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