Silicon Schottky Diode
q
q
q
q
BAS 70W
General-purpose diodes for
high-speed switching
Circuit protection
Voltage clamping
High-level detection and mixing
Type
Ordering Code
(tape and reel)
Q62702-A1068
Q62702-A1069
Q62702-A1070
Pin Configuration
1
2
3
A1
A1
C1
C2
A2
C2
Marking
Package
1)
BAS 70-04W
BAS 70-05W
BAS 70-06W
C1/A2 74s
C1/C2 75s
A1/A2 76s
SOT-323
Maximum Ratings
Parameter
Reverse voltage
Forward current
Surge forward current,
t
≤
10 ms
Total power dissipation
T
S
≤
91
°C
Operating temperature range
Storage temperature range
Thermal Resistance
Junction-ambient
1)
Junction-soldering point
Symbol
Values
70
70
100
250
– 55 … + 150
– 55 … + 150
Unit
V
mA
mA
mW
°C
°C
V
R
I
F
I
FSM
P
tot
T
op
T
stg
R
th JA
R
th JS
≤
455
≤
235
K/W
K/W
1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm
2
Cu.
Semiconductor Group
1
10.94
BAS 70W
Electrical Characteristics
at
T
A
= 25
°C,
unless otherwise specified.
Parameter
Symbol
min.
DC Characteristics
Breakdown voltage
I
(BR)
= 10
µA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
Reverse current
V
R
= 50 V
V
R
= 70 V
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
Charge carrier life time
I
F
= 25 mA
Differential forward resistance
I
F
= 10 mA,
f
= 10 kHz
Series inductance
Value
typ.
max.
Unit
V
(BR)
70
–
375
705
880
–
–
1.5
–
34
2
–
V
mV
300
600
750
410
750
1000
µA
–
–
0.1
10
pF
–
2
ps
–
100
Ω
–
–
–
nH
–
V
F
I
R
C
T
τ
r
f
L
S
Semiconductor Group
2
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