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2N6385E3

Description
Power Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size359KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance  
Download Datasheet Parametric View All

2N6385E3 Overview

Power Bipolar Transistor

2N6385E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Objectid1347905297
Reach Compliance Codeunknown
ECCN codeEAR99
JESD-609 codee3
Terminal surfaceMATTE TIN
2N6383 – 2N6385
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
NPN Darlington Power Silicon Transistor
Qualified per MIL-PRF-19500/523
DESCRIPTION
This high speed NPN transistor is rated at 10 amps and is military qualified up to the JANTXV
level. This TO-204AA isolated package features a 180 degree lead orientation.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 2N6383 through 2N6385
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/523.
(See
part nomenclature
for all available options.)
RoHS compliant versions are available (commercial grade only)
TO-204AA
(TO-3)
Package
APPLICATIONS / BENEFITS
Military and other high reliability applications
High frequency response
TO-204AA case with isolated terminals
MAXIMUM RATINGS
@ T
A
= +25
o
C unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case
Collector-Emitter Voltage
Symbol
T
J
and T
STG
R
ӨJC
V
CEO
Value
-55 to +175
1.75
40
60
80
40
60
80
5
6.0
100
0.25
10
Unit
o
Collector-Base Voltage
2N6383
2N6384
2N6385
2N6383
2N6384
2N6385
@ T
A
= +25 C
o (2)
@ T
C
= +25 C
o
(1)
C
C/W
V
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
o
V
CBO
V
Emitter-Base Voltage
Total Power Dissipation
Base Current
Collector Current
V
EBO
P
T
I
B
I
C
V
W
A
A
Notes:
1. Derate linearly 34.2 mW/
o
C above T
A
> +25
o
C.
2. Derate linearly 571 mW/
o
C above T
C
> +25
o
C.
T4-LDS-0316, Rev. 1 (9/13/13)
©2013 Microsemi Corporation
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