VS647 datasheet, PDF - EEWORLD Datasheet

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VS647: DescriptionBridge Rectifier Diode, Avalanche, 1 Phase, 2A, 600V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size90KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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VS647 Overview

Bridge Rectifier Diode, Avalanche, 1 Phase, 2A, 600V V(RRM), Silicon,

VS647 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microsemi
Reach Compliance Code	unknow
Minimum breakdown voltage	650 V
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
JESD-30 code	S-PUFM-W4
JESD-609 code	e0
Maximum non-repetitive peak forward current	50 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-50 °C
Maximum output current	2 A
Package body material	PLASTIC/EPOXY
Package shape	SQUARE
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	5 µA
surface mount	NO
technology	AVALANCHE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	UPPER

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Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknow	unknown	unknown	unknown	unknown	unknow	unknow
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V
JESD-30 code	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4
JESD-609 code	e0	e0	e0	e0	e0	e0	e0
Maximum non-repetitive peak forward current	50 A	50 A	50 A	50 A	50 A	50 A	50 A
Number of components	4	4	4	4	4	4	4
Phase	1	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C
Maximum output current	2 A	2 A	2 A	2 A	2 A	2 A	2 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	600 V	400 V	200 V	200 V	1000 V	100 V	800 V
Maximum reverse current	5 µA	0.000005 µA	5 µA	0.000005 µA	0.000005 µA	0.000005 µA	5 µA
surface mount	NO	NO	NO	NO	NO	NO	NO
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
Maker	Microsemi	-	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi

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