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BAS70H

Description
0.07 A, 70 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size58KB,1 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BAS70H Overview

0.07 A, 70 V, SILICON, SIGNAL DIODE

BAS70H Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formFLAT
terminal coatingTIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureSINGLE
Diode component materialsSILICON
Diode typeSIGNAL DIODE
Maximum repetitive peak reverse voltage70 V
Maximum average forward current0.0700 A
BAS70H/ -04/ -05/ -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
·
·
·
Low Turn-on Voltage
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
DISCONTINUED -
USE BAS70 SERIES
A
SOT-23
Dim
A
B
C
D
E
G
H
J
Min
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.013
0.89
0.45
0.076
Max
0.51
1.40
2.50
1.05
0.61
2.05
3.05
0.15
1.10
0.61
0.178
Mechanical Data
·
·
·
·
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagrams
Approx. Weight: 0.008 grams
E
TOP VIEW
B
C
D
G
H
K
J
L
M
K
L
M
All Dimensions in mm
BAS70H Marking: K73
BAS70H-04 Marking: K74
BAS70H-05 Marking: K75
BAS70H-06 Marking: K76
Maximum Ratings and Electrical Characteristics, Single Diode
@ T
A
= 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t
p
<
1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
F
I
FSM
P
d
R
qJA
T
j
T
STG
BAS70
70
49
200
600
200
625
-55 to +125
-65 to +150
Unit
V
V
mA
mA
mW
K/W
°C
°C
Electrical Ratings
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
I
RM
C
j
t
rr
Min
70
¾
¾
Max
410
1000
100
2.0
5.0
Unit
V
mV
nA
pF
ns
Test Condition
I
R
= 10mA
t
p
<300µs, I
F
= 1.0mA
t
p
<300µs, I
F
= 15mA
t
p
< 300µs, V
R
= 50V
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 10mA to I
R
= 1.0mA,
R
L
=100W
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Peak Reverse Current
Junction Capacitance
Reverse Recovery Time
Notes:
1. Valid Provided that terminals are kept at ambient temperature.
2. Test period <3000ms.
DS30190 Rev. 4 - 4
1 of 1
BAS70H/-04/-05/-06

BAS70H Related Products

BAS70H BAS70H-04 BAS70H-06 BAS70H-05
Description 0.07 A, 70 V, SILICON, SIGNAL DIODE 0.07 A, 70 V, SILICON, SIGNAL DIODE 0.07 A, 70 V, SILICON, SIGNAL DIODE 0.07 A, 70 V, SILICON, SIGNAL DIODE
Number of terminals 2 2 2 2
Number of components 1 1 1 1
Processing package description PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2
Lead-free Yes Yes Yes Yes
EU RoHS regulations Yes Yes Yes Yes
China RoHS regulations Yes Yes Yes Yes
state ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes
Terminal form FLAT FLAT FLAT FLAT
terminal coating TIN TIN TIN TIN
Terminal location DUAL DUAL DUAL DUAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Craftsmanship SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
structure SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE
Maximum repetitive peak reverse voltage 70 V 70 V 70 V 70 V
Maximum average forward current 0.0700 A 0.0700 A 0.0700 A 0.0700 A

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