®
BAS70J / BAS70W
BAS70-04W /BAS70-05W / BAS70-06W
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS
n
NC
K
NC
A
K1
A
K
A
K2
K2
n
n
n
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP
SURFACE MOUNT DEVICE
A
K1
BAS70W
DESCRIPTION
Schottky barrier diodes encapsulated either in
SOT-323 or SOD-323 small SMD packages.
Single and double diodes with different pining are
available.
K
A2
A1
A1
K
A2
A2
K1
BAS70-06W
K2
A2
K1
K2
A1
A1
BAS70-05W
SOT-323
BAS70-04W
A
76
K
BAS70J
SOD-323
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F
I
FSM
P
tot
T
stg
Tj
T
L
Continuous forward current
Surge non repetitive forward current
Power dissipation (note 1)
Tamb = 25°C
Maximum storage temperature range
Maximum operating junction temperature *
Maximum temperature for soldering during 10s
tp = 10 ms
SOD-323
SOT-323
- 65 to +150
150
260
°C
°C
°C
Parameter
Repetitive peak reverse voltage
Value
70
70
1
230
Unit
V
mA
A
mW
Note 1:
for double diodes, Ptot is the total dissipation of both diodes.
* :
dPtot
1
<
thermal runaway condition for a diode on its own heatsink
dTj
Rth
(
j
−
a
)
1/5
May 2000 - Ed: 4B
BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06W
THERMAL RESISTANCE
Symbol
R
th (j-a)
Junction to ambient (*)
Parameters
SOD-323
SOT-323
(*) Mounted on epoxy board, with recommended pad layout.
Value
550
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol
V
BR
V
F
*
I
R
**
Pulse test:
Test Conditions
Tj = 25°C
Tj = 25°C
Tj = 25°C
* tp = 380µs,
δ
< 2%
** tp = 5 ms,
δ
< 2%
Min.
70
Typ.
Max.
Unit
V
I
R
= 10µA
I
F
= 1mA
V
R
= 50V
410
100
mV
nA
DYNAMIC CHARACTERISTICS
Symbol
C
τ*
Tj = 25°C
F = 1MHz
Test Conditions
V
R
= 0V
Min.
Typ.
Max.
2
100
Unit
pF
ps
Tj = 25°C
I
F
= 5mA
Krakauer Method
* Effective carrier life time.
2/5
BAS70-05W / BAS70-06W
Fig. 1:
Forward voltage drop versus forward
current.
IFM(A)
7E-2
Tj=100°C
Typical values
BAS70J / BAS70W / BAS70-04W /
Fig. 2:
Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
1E+1
Tj=100°C
1E-2
Tj=25°C
Maximum values
1E+0
1E-1
Tj=25°C
1E-3
Tj=25°C
Typical values
1E-2
VFM(V)
1E-4
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VR(V)
1E-3
0
5 10 15 20 25 30 35 40 45 50 55 60 65 70
Fig. 3:
Reverse leakage current versus junction
temperature (typical values).
IR(µA)
5E+2
VR=70V
Fig. 4:
Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
2.0
1.0
F=1MHz
Tj=25°C
1E+2
1E+1
1E+0
1E-1
Tj(°C)
1E-2
0
25
50
75
100
125
150
0.1
1
VR(V)
10
100
Fig. 5:
Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
FR4
with
recommended
pad
layout,
S(Cu)=35µm).
Fig. 6:
Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35µm).
Rth(j-a) (°C/W)
600
P=0.2W
Zth(j-a)/Rth(j-a)
1.00
δ
= 0.5
550
500
450
T
δ
= 0.2
0.10
δ
= 0.1
400
350
tp
Single pulse
tp(s)
1E-1
1E+0
δ
=tp/T
S(Cu) (mm )
300
0
5
10
15
20
25
30
35
40
45
50
0.01
1E-3
1E-2
1E+1
1E+2
3/5
BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06W
PACKAGE MECHANICAL DATA
SOT-323
DIMENSIONS
A
REF.
A1
D
Millimeters
Min.
Typ. Max. Min.
1.1
0.1
0.4
2.0
1.25
0.65
1.8
0.1
0
2.1
0.2
2.4
0.3
30°
2.2
0.031
0.0
0.010
0.8
0.0
0.25
0.1
1.8
1.15
Inches
Typ. Max.
0.043
0.004
0.016
0.010
A
A1
b
c
b
0.26 0.004
D
E
e
H
E
0.071 0.079 0.086
0.026
0.071 0.083 0.094
0.004 0.008 0.012
0
30°
L
1.35 0.045 0.049 0.053
H
θ
c
L
θ
e
4/5
BAS70-05W / BAS70-06W
PACKAGE MECHANICAL DATA
SOD-323
BAS70J / BAS70W / BAS70-04W /
H
b
E
A1
DIMENSIONS
REF.
A
A1
0
0.25
0.1
1.52
1.11
2.3
0.1
0.1
b
c
D
Millimeters
Min.
Max.
1.17
0.1
0.44
0.25
1.8
1.45
2.7
0.46
0.41
0
0.01
0.004
0.06
0.044
0.09
0.004
0.004
Inches
Min.
Max.
0.046
0.004
0.017
0.01
0.071
0.057
0.106
0.02
0.016
D
A
c
Q1
E
H
L
Q1
L
Ordering type
BAS70W
BAS70-04W
BAS70-05W
BAS70-06W
BAS70J
n
Marking
D28
D31
D30
D29
76
Package
SOT-323
SOT-323
SOT-323
SOT-323
SOD-323
Weight
0.006g
0.006g
0.006g
0.006g
0.005g
Base qty
3000
3000
3000
3000
3000
Delivery mode
Tape & reel
Tape & reel
Tape & reel
Tape & reel
Tape & reel
Epoxy meets UL94,V0
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change without notice. This publication supersedes and replaces all information previously supplied.
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