LESHAN RADIO COMPANY, LTD.
SCHOTTKY Barrier Diode
BAS70LT1
These Schottky barrier diodes are designed for high speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Min-
iature surface mount package is excellent for hand held and
portable applications where space is limited.
1
2
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
* 70V SCHOTTKY BARRIER DIODES
3
•
Extremely Fast Switching Speed
•
Low Forward Voltage — 0.75 Volts (Typ) @ I = 10 mAdc
F
ANODE
1
CATHODE
3
DEVICE MARKING
BAS70LT1= BE
MAXIMUM RATINGS
(T
J
= 150°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Operating Junction and Storage
Temperature Range
Symbol
V
R
P
F
225
1.8
T
J
, T
stg
–55 to +150
mW
mW/°C
°C
Value
70
Unit
Volts
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (I
R
= 10
µA)
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 50 V)
(V
R
= 70V)
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage (I
F
= 10 mAdc)
Forward Voltage (I
F
= 15 mAdc)
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
V
F
Min
70
—
—
—
—
—
—
Max
—
2.0
0.1
10
410
750
1.0
Unit
Volts
pF
µAdc
mVdc
mVdc
Vdc
BAS70LT1–1/2
LESHAN RADIO COMPANY, LTD.
BAS70LT1
100
100
I
R
, REVERSE CURRENT (µ A)
10
I
F
, FORWARD CURRENT (mA)
10
1.0
0.1
1.0
0.01
0.1
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
5.0
10
15
20
25
30
35
40
45
50
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 1. Typical Forward Current
Figure 2. Reverse Current Versus Reverse Voltage
1.4
1.2
1.0
C
T
, CAPACITANCE (pF)
0.8
0.6
0.4
0.2
0
0
5.0
10
15
20
25
30
35
40
45
50
V
R
, REVERSE VOLTAGE (V)
Figure 3. Typical Current
BAS70LT1–2/2
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