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BF199RLRA

Description
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, PLASTIC, TO-226AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size333KB,24 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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BF199RLRA Overview

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, PLASTIC, TO-226AA, 3 PIN

BF199RLRA Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-based maximum capacity0.35 pF
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
highest frequency bandVERY HIGH FREQUENCY BAND
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power consumption environment1 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)750 MHz
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
RF Transistor
NPN Silicon
COLLECTOR
1
3
BASE
2
EMITTER
BF199
1
2
3
CASE 29–04, STYLE 21
TO–92 (TO–226AA)
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
25
40
4.0
100
350
2.8
1.0
8.0
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
357
125
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
V(BR)CEO
25
V(BR)CBO
40
V(BR)EBO
4.0
ICBO
100
nAdc
Vdc
Vdc
Vdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–231

BF199RLRA Related Products

BF199RLRA BF199RL BF199ZL1 BF199RL1 BF199RLRE BF199RLRM
Description RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, PLASTIC, TO-226AA, 3 PIN VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, PLASTIC, TO-226AA, 3 PIN RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, PLASTIC, TO-226AA, 3 PIN RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, PLASTIC, TO-226AA, 3 PIN
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknow unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-based maximum capacity 0.35 pF 0.35 pF 0.35 pF 0.35 pF 0.35 pF 0.35 pF
Collector-emitter maximum voltage 25 V 25 V 25 V 25 V 25 V 25 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 40 40 40 40 40
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power consumption environment 1 W 1 W 1 W 1 W 1 W 1 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 750 MHz 750 MHz 750 MHz 750 MHz 750 MHz 750 MHz
Maker Motorola ( NXP ) - - Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )

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