RN2005 datasheet, PDF - EEWORLD Datasheet

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RN2005: DescriptionSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications; CategoryDiscrete semiconductor The transistor; File Size251KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN2005 Overview

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2005 Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 21.36
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.4 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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RN2001~RN2006

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2001,RN2002,RN2003

RN2004,RN2005,RN2006

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1001~RN1006

Unit: mm

Equivalent Circuit and Bias Resister Values

Type No.

RN2001

RN2002

RN2003

RN2004

RN2005

RN2006

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

EIAJ

TOSHIBA

Weight: 0.21g

TO-92

SC-43

2-5F1B

Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2001~2006

RN2001~2004

RN2005, 2006

Symbol

CBO

CEO

EBO

stg

Rating

−50

−10

−5

−100

400

150

−55~150

Unit

°C

2001-06-07

RN2005 Related Products

	RN2005	RN2001	RN2002	RN2003	RN2004	RN2006
Description	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Maker	Toshiba Semiconductor	-	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
Parts packaging code	TO-92	-	TO-92	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	-	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	-	3	3	3	3
Reach Compliance Code	unknow	-	unknow	unknow	unknow	unknow
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 21.36	-	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 10
Maximum collector current (IC)	0.1 A	-	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	-	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80	-	50	70	80	80
JEDEC-95 code	TO-92	-	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	-	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e0	-	e0	e0	e0	e0
Number of components	1	-	1	1	1	1
Number of terminals	3	-	3	3	3	3
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	-	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	-	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.4 W	-	0.4 W	0.4 W	0.4 W	0.4 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	-	NO	NO	NO	NO
Terminal surface	TIN LEAD	-	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	-	200 MHz	200 MHz	200 MHz	200 MHz

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