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BAS82

Description
SIGNAL DIODE, DO-213AA
CategoryDiscrete semiconductor    diode   
File Size47KB,8 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BAS82 Overview

SIGNAL DIODE, DO-213AA

BAS82 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-609 codee3
Maximum non-repetitive peak forward current0.5 A
Number of components1
Maximum operating temperature150 °C
Maximum output current0.03 A
Maximum repetitive peak reverse voltage50 V
surface mountYES
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn)
DISCRETE SEMICONDUCTORS
DATA SHEET
lfpage
M3D121
BAS81; BAS82; BAS83
Schottky barrier diodes
Product specification
Supersedes data of 1996 Sep 30
1998 Jun 24

BAS82 Related Products

BAS82 BAS81
Description SIGNAL DIODE, DO-213AA 0.03 A, 40 V, SILICON, SIGNAL DIODE
Is it Rohs certified? conform to conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow
Configuration SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V
JESD-609 code e3 e3
Maximum non-repetitive peak forward current 0.5 A 0.5 A
Number of components 1 1
Maximum operating temperature 150 °C 150 °C
Maximum output current 0.03 A 0.03 A
Maximum repetitive peak reverse voltage 50 V 40 V
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal surface Matte Tin (Sn) Matte Tin (Sn)

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