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BAS78C

Description
1 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size66KB,3 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BAS78C Overview

1 A, SILICON, SIGNAL DIODE

BAS78C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSIEMENS
package instructionR-PSSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2 V
JESD-30 codeR-PSSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature25 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation1.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse current1 µA
Maximum reverse recovery time1 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Base Number Matches1
Silicon Switching Diodes
BAS 78 A
… BAS 78 D
q
Switching applications
q
High breakdown voltage
Type
BAS 78 A
BAS 78 B
BAS 78 C
BAS 78 D
Marking
BAS 78 A
BAS 78 B
BAS 78 C
BAS 78 D
Ordering Code
(tape and reel)
Q62702-A910
Q62702-A911
Q62702-A912
Q62702-A913
Pin Configuration
Package
1)
SOT-223
Maximum Ratings
Parameter
Symbol
BAS
78 A
Reverse voltage
Peak reverse voltage
Forward current
Peak forward current
Surge forward current,
t
= 1
µ
s
Total power dissipation,
T
S
=
124 ˚C
2)
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
92
22
Values
BAS
BAS
78 B
78 C
100
100
1
1
10
1.2
150
– 65 … + 150
200
200
Unit
BAS
78 D
400
400
A
V
V
R
V
RM
I
F
I
FM
I
FS
P
tot
T
j
T
stg
50
50
W
˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91

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BAS78C BAS78 BAS78B BAS78A BAS78D Q62702-A913 Q62702-A911 Q62702-A912 Q62702-A910
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