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RN2706JE

Description
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
CategoryDiscrete semiconductor    The transistor   
File Size99KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

RN2706JE Overview

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2706JE Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-F5
Contacts5
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 10
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-F5
Number of components2
Number of terminals5
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.1 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
RN2701JE~RN2706JE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2701JE,RN2702JE,RN2703JE
RN2704JE,RN2705JE,RN2706JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
·
·
Two devices are incorporated into an Extreme-Super-Mini (5 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
·
Complementary to RN1701JE~RN1706JE
Unit: mm
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN2701JE
RN2702JE
R2
RN2703JE
RN2704JE
E
RN2705JE
RN2706JE
R1 (kW)
4.7
10
22
47
2.2
4.7
R2 (kW)
4.7
10
22
47
47
47
B
R1
JEDEC
JEITA
TOSHIBA
Weight:
g (typ.)
Maximum Ratings
(Ta
=
25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2701JE~RN2706JE
RN2701JE~RN2706JE
RN2701JE~RN2704JE
RN2705JE, RN2706JE
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note)
T
j
T
stg
Rating
-50
-50
-10
-5
-100
100
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
1
2
3
Equivalent Circuit
(top view)
5
Q1
4
Q2
Note: Total rating
1
2002-01-24

RN2706JE Related Products

RN2706JE RN2701JE RN2702JE RN2703JE RN2704JE RN2705JE
Description Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
package instruction SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-F5
Contacts 5 5 5 5 5 5
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 10 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 21.37
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V
Configuration COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 80 30 50 70 80 80
JESD-30 code R-PDSO-F5 R-PDSO-F5 R-PDSO-F5 R-PDSO-F5 R-PDSO-F5 R-PDSO-F5
Number of components 2 2 2 2 2 2
Number of terminals 5 5 5 5 5 5
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.1 W 0.1 W 0.1 W 0.1 W 0.1 W 0.1 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz
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