FNA25012A
1200 V Motion SPM
)
2 Series
The FNA25012A is a Motion SPM
®
2 module providing
a fully−featured, high−performance inverter output stage for AC
induction, BLDC, and PMSM motors. These modules integrate
optimized gate drive of the built−in IGBTs to minimize EMI and
losses, while also providing multiple on−module protection features:
under−voltage lockouts, over−current shutdown, temperature sensing,
and fault reporting. The built−in, high−speed HVIC requires only
a single supply voltage and translates the incoming logic−level gate
inputs to high−voltage, high−current drive signals to properly drive the
module’s internal IGBTs. Separate negative IGBT terminals are
available for each phase to support the widest variety of control
algorithms.
Features
General Description
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•
1200 V
−
50 A 3−Phase IGBT Inverter, Including Control Ics for
•
•
•
•
•
•
•
•
Gate Drive and Protections
Low−Loss, Short−Circuit−Rated IGBTs
Very Low Thermal Resistance Using AIN DBC Substrate
Built−In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB
Layout
Separate Open−Emitter Pins from Low−Side IGBTs for Three−Phase
Current Sensing
Single−Grounded Power Supply Supported
Built−In NTC Thermistor for Temperature Monitoring and
Management
Adjustable Over−Current Protection via Integrated Sense−IGBTs
Isolation Rating of 2500 Vrms/1 min.
SPMCA−A34/34 LD, PDD STD, DBC DIP TYPE
CASE MODFQ
Figure 1. 3D Package Drawing
(Click to Activate 3D Content)
MARKING DIAGRAM
Applications
•
Motion Control
−
Industrial Motor (AC 400 V Class)
Related Resources
FNA25012A
XXX YWW
•
AN9075
−
Users Guide for 1200 V SPM
®
2 Series
•
AN9076
−
Mounting Guide for New SPM
®
2 Package
•
AN9079
−
Thermal Performance of 1200 V Motion SPM
®
2 Series
by Mounting Torque
FNA25012A
XXX
YWW
= Specific Device Code
= Lot Code
= Work Week Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2018
October, 2018
−
Rev. 3
1
Publication Order Number:
FNA25012A/D
FNA25012A
PACKAGE MARKING AND ORDERING INFORMATION
Device
FNA25012A
Device Marking
FNA25012A
Package
SPMCB−A34
Packing Type
Rail
Quantity
6
Integrated Power Functions
•
1200 V
−
50 A IGBT inverter for three−phase DC/AC power conversion (Refer to Figure 3)
Integrated Drive, Protection and System Control Functions
•
For inverter high−side IGBTs: gate−drive circuit, high−voltage isolated high−speed level shifting control circuit,
Under−Voltage Lock−Out Protection (UVLO), Available bootstrap circuit example is given in Figures 5 and 15
•
For inverter low−side IGBTs: gate−drive circuit, Short−Circuit Protection (SCP) control circuit, Under−Voltage
Lock−Out Protection (UVLO)
•
Fault signaling: corresponding to UV (low−side supply) and SC faults
•
Input interface: active−HIGH interface, works with 3.3/5 V logic, Schmitt−trigger input
PIN CONFIGURATION
(34) V
S(W)
(33) V
B(W)
(1) P
(32) V
BD(W)
(31) V
CC(WH)
(30) IN
(WH)
(29) V
S(V)
(28) V
B(V)
(27) V
BD(V)
(26) V
CC(VH)
(25) IN
(VH)
(24) V
S(U)
(23) V
B(U)
(22) V
BD(U)
(21) V
CC(UH)
(20) COM
(H)
(19) IN
(UH)
(18) R
SC
(5) N
W
(6) N
V
(7) N
U
(8) R
TH
(9) V
TH
(17) C
SC
(16) C
FOD
(15) V
FO
(14) IN
(WL)
(13) IN
(VL)
(12) IN
(UL)
(11) COM
(L)
(10) VCC
(L)
(2) W
(3) V
Case Temperature (T
C
)
Detecting Point
(4) U
Figure 2. Top View
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FNA25012A
PIN DESCRIPTIONS
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Pin Name
P
)
W
V
U
N
W
N
V
N
U
R
TH
V
TH
V
CC(L)
COM
(L)
IN
(UL)
IN
(VL)
IN
(WL)
V
FO
C
FOD
C
SC
R
SC
IN
(UH)
COM
(H)
V
CC(UH)
V
BD(U)
V
B(U)
V
S(U)
IN
(VH)
V
CC(VH)
V
BD(V)
V
B(V)
V
S(V)
IN
(WH)
V
CC(WH)
V
BD(W)
V
B(W)
V
S(W)
Positive DC−Link Input
Output for W−Phase
Output for V−Phase
Output for U−Phase
Negative DC−Link Input for W−Phase
Negative DC−Link Input for V−Phase
Negative DC−Link Input for U−Phase
Series Resistor for Thermistor (Temperature Detection)
Thermistor Bias Voltage
Low−Side Bias Voltage for IC and IGBTs Driving
Low−Side Common Supply Ground
Signal Input for High−Side U−Phase
Signal Input for High−Side V−Phase
Signal Input for High−Side W−Phase
Fault Output
Capacitor for Fault Output Duration Selection
Capacitor (Low−Pass Filter) for Short−Circuit Current Detection Input
Resistor for Short−Circuit Current Detection
Signal Input for High−Side U Phase
High−Side Common Supply Ground
High−Side Bias Voltage for U Phase IC
Anode of Bootstrap Diode for U Phase High−Side Bootstrap Circuit
High−Side Bias Voltage for U Phase IGBT Driving
High−Side Bias Voltage Ground for U Phase IGBT Driving
Signal Input for High−Side V Phase
High−Side Bias Voltage for V Phase IC
Anode of Bootstrap Diode for V Phase High−Side Bootstrap Circuit
High−Side Bias Voltage for V Phase IGBT Driving
High−Side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High−Side W Phase
High−Side Bias Voltage for W Phase IC
Anode of Bootstrap Diode for W Phase High−Side Bootstrap Circuit
High−Side Bias Voltage for W Phase IGBT Driving
High−Side Bias Voltage Ground for W Phase IGBT Driving
Pin Description
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3
FNA25012A
INTERNAL EQUIVALENT CIRCUIT AND INPUT/OUTPUT PINS
(1) P
V
B
V
CC
OUT
IN
(33) V
B(W)
(32) V
BD(W)
(31) V
CC(WH)
(30) IN
(WH)
(34) V
S(W)
(28) V
B(V)
(27) V
BD(V)
(26) V
CC(VH)
(25) IN
(VH)
(29) V
S(V)
(23) V
B(U)
(22) V
BD(U)
(21) V
CC(UH)
(20) COM
(H)
(19) IN
(UH)
(24) V
S(U)
(17) C
SC
(16) C
FOD
(15) V
FO
(14) IN
(WL)
(13) IN
(VL)
(12) IN
(UL)
(11) COM
(L)
(10) VCC
(L)
HVIC
OUT
V
S
(2) W
V
B
V
CC
OUT
IN
HVIC
OUT
V
S
(3) V
V
B
V
CC
OUT
IN
HVIC
OUT
V
S
(4) U
C
SC
C
FOD
V
FO
IN
IN
IN
COM
V
CC
OUT
(5) N
W
LVIC
OUT
(6) N
V
OUT
Thermistor
(18) R
SC
(7) N
U
(8) R
TH
(9) V
TH
NOTES:
1. Inverter high−side is composed of three normal−IGBTs, freewheeling diodes, and one control IC for each IGBT.
2. Inverter low−side is composed of three sense−IGBTs, freewheeling diodes, and one control IC for each IGBT. It has gate drive and
protection functions.
3. Inverter power side is composed of four inverter DC−link input terminals and three inverter output terminals.
Figure 3. Internal Block Diagram
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FNA25012A
ABSOLUTE MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
INVERTER PART
Symbol
V
PN
V
PN(Surge)
V
CES
±I
C
±I
CP
P
C
T
J
Supply Voltage
Supply Voltage (Surge)
Collector−Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Collector Dissipation
Operating Junction Temperature
T
C
= 25°C, T
J
=150°C
(Note 4)
Parameter
Conditions
Applied between P−N
U
, N
V
, N
W
Applied between P−N
U
, N
V
, N
W
Rating
900
1000
1200
50
75
347
−40∼150
Unit
V
V
V
A
A
W
°C
T
C
= 25°C, T
J
=150°C, Under 1 ms
Pulse Width
(Note 4)
T
C
=25°C per One Chip
(Note 4)
CONTROL PART
Symbol
V
CC
V
BS
V
IN
V
FO
I
FO
V
SC
Parameter
Control Supply Voltage
High−Side Control Bias Voltage
Input Signal Voltage
Fault Output Supply Voltage
Fault Output Current
Current Sensing Input Voltage
Conditions
Applied between V
CC(H)
, V
CC(L)
−COM
Applied between V
B(U)
−V
S(U)
,
V
B(V)
−V
S(V)
, V
B(W)
−V
S(W)
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
,
IN
(UL)
, IN
(VL)
, IN
(WL)
−COM
Applied between V
FO
−COM
Sink Current at V
FO
pin
Applied between C
SC
−COM
Rating
20
20
−0.3∼V
CC
+0.3
−0.3∼V
CC
+0.3
2
−0.3∼V
CC
+0.3
Unit
V
V
V
V
mA
V
BOOTSTRAP DIODE PART
Symbol
V
RRM
I
F
I
FP
T
J
Parameter
Maximum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
Operating Junction Temperature
T
C
= 25°C, T
J
≤150°C
(Note 4)
Conditions
Rating
1200
1.0
2.0
−40∼150
Unit
V
A
A
°C
T
C
= 25°C, T
J
=150°C, Under 1 ms
Pulse Width
(Note 4)
TOTAL SYSTEM
Symbol
V
PN(PROT)
T
C
T
STG
V
ISO
Parameter
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
60 Hz, Sinusoidal, AC 1 minute,
Connection Pins to Heat Sink Plate
Conditions
V
CC
= V
BS
= 13.5∼16.5 V, T
J
= 150°C,
V
CES
= < 1200 V, Non−repetitive, < 2
ms
See Figure 2
Rating
800
−40∼125
−40∼125
2500
Unit
V
°C
°C
V
rms
THERMAL RESISTANCE
Symbol
R
th(j−c)Q
R
th(j−c)F
Parameter
Junction to Case Thermal
Resistance
(Note 5)
Conditions
Inverter IGBT part (per 1/6 module)
Inverter FWD part (per 1/6 module)
Min.
−
−
Typ.
−
−
Max.
0.36
0.66
Unit
°C/W
°C/W
4. These values had been made an acquisition by the calculation considered to design factor.
5. For the measurement point of case temperature (T
C
), please refer to Figure 2.
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