FODM214, FODM217 Series
Single Channel, AC/DC
Sensing Input,
Phototransistor
Optocoupler In Half-Pitch
Mini-Flat 4-Pin Package
The FODM217 series consist of a gallium arsenide infrared emitting
diode driving a phototransistor. The FODM214 series consist of two
gallium arsenide infrared emitting diodes connected in inverse parallel
for AC operation. Both were built in a compact, half−pitch, mini−flat,
4−pin package. The lead pitch is 1.27 mm.
Features
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•
Current Transfer Ratio Ranges from 20 to 600%
MFP4 2.5x4.4, 1.27P
CASE TBD
at I
F
=
±1
mA, V
CE
= 5 V, T
A
= 25°C
♦
FODM214
−
20 to 400%
♦
FODM214A
−
50 to 250%
at I
F
= 5 mA, V
CE
= 5 V, T
A
= 25°C
♦
FODM217A
−
80 to 160%
♦
FODM217B
−
130 to 260%
♦
FODM217C
−
200 to 400%
♦
FODM217D
−
300 to 600%
•
Safety and Regulatory Approvals:
♦
UL1577, 3750 VAC
RMS
for 1 min
♦
DIN EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage
•
Applicable to Infrared Ray Reflow, 260°C
Typical Applications
MARKING DIAGRAM
•
•
•
•
•
Primarily Suited for DC−DC Converters
For Ground Loop Isolation, Signal to Noise Isolation
Communications – Adapters, Chargers
Consumer – Appliances, Set Top Boxes
Industrial – Power Supplies, Motor Control, Programmable Logic
Control
1.
2.
3.
4.
5.
6.
ON
21xx
V
X
YY
R1
= Corporate Logo
= Device Number
= DIN EN/IEC60747−5−5 Option
= One−Digit Year Code
= Digit Work Week
= Assembly Package Code
PIN CONNECTIONS
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2018
August, 2019
−
Rev. 2
1
Publication Order Number:
FODM214/D
FODM214, FODM217 Series
SAFETY AND INSULATIONS RATING
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE 0110/1.89 Table 1,
For Rated Mains Voltage
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
< 150 V
RMS
< 300 V
RMS
Characteristics
I–IV
I–III
55/110/21
2
175
Symbol
V
PR
Parameter
Input−to−Output Test Voltage, Method A, V
IORM
x 1.6 = V
PR
,
Type and Sample Test with t
m
= 10 s, Partial Discharge < 5 pC
Input−to−Output Test Voltage, Method B, V
IORM
x 1.875 = V
PR
,
100% Production Test with t
m
= 1 s, Partial Discharge < 5 pC
Value
904
1060
565
4,000
≥
5
≥
5
≥
0.4
150
200
300
> 10
9
Unit
Vpeak
Vpeak
Vpeak
Vpeak
mm
mm
mm
°C
mA
mW
W
V
IORM
V
IOTM
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
External Clearance
DTI
T
S
I
S,INPUT
P
S,OUTPUT
R
IO
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
Input Current (Note 1)
Output Power (Note 1)
Insulation Resistance at T
S
, V
IO
= 500 V (Note 1)
1. Safety limit values – maximum values allowed in the event of a failure.
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified.)
Symbol
T
STG
T
OPR
T
J
T
SOL
EMITTER
I
F(average)
IF
(peak)
V
R
PD
LED
DETECTOR
I
C(average)
V
CEO
V
ECO
PD
C
Continuous Collector Current
Collector−Emitter Voltage
Emitter−Collector Voltage
Collector Power Dissipation (Note 2)
50
80
7
150
mA
V
V
mW
Continuous Forward Current
Peak Forward Current (1
ms
pulse, 300 pps)
Reverse Input Voltage
Power Dissipation (Note 2)
50
1
6
70
mA
A
V
mW
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
(Refer to Reflow Temperature Profile)
Parameter
Value
−55
to +150
−55
to +110
−55
to +125
260 for 10 sec
Units
°C
°C
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.
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2
FODM214, FODM217 Series
ELECTRICAL CHARACTERISTICS
T
A
= 25°C unless otherwise specified
Symbol
EMITTER
V
F
Forward Voltage
FODM214
FODM217
I
R
C
T
DETECTOR
BV
CEO
BV
ECO
I
CEO
Collector−Emitter Breakdown Voltage
Emitter−Collector Breakdown Voltage
Collector Dark Current
All
All
All
I
C
= 0.1 mA, IF = 0 mA
I
E
= 10
mA,
IF = 0 mA
V
CE
= 50 V, IF = 0 mA
80
7
100
V
V
nA
Reverse Current
Terminal Capacitance
FODM217
All
I
F
=
±20
mA
I
F
= 20 mA
V
R
= 4 V
V = 0 V, f = 1 kHz
30
1.2
1.4
10
250
V
Parameter
Device
Conditions
Min.
Typ.
Max.
Units
mA
pF
TRANSFER CHARACTERISTICS
T
A
=25°C unless otherwise specified
Symbol
CTR
CE
Parameter
Current Transfer Ratio
(collector−emitter)
Device
FODM214
FODM214A
FODM217A
FODM217B
FODM217C
FODM217D
I
C
CTR
(SAT)
I
C(SAT)
V
CE(SAT)
Collector Current
FODM214
FODM217
Saturated Current Transfer Ratio
FODM214
FODM217
Collector Current
FODM214
FODM217
Collector−Emitter Saturation Voltage
FODM214
FODM217
I
F
=
±1
mA, V
CE
= 5 V
I
F
= 5 mA, V
CE
= 5 V
I
F
=
±8
mA, V
CE
= 0.4 V
I
F
= 8 mA, V
CE
= 0.4 V
I
F
=
±8
mA, V
CE
= 0.4 V
I
F
= 8 mA, V
CE
= 0.4 V
I
F
=
±8
mA, I
C
= 2.4 mA
I
F
= 8 mA, I
C
= 2.4 mA
I
F
= 5 mA, V
CE
= 5 V
Conditions
I
F
=
±1
mA, V
CE
= 5 V
Min.
20
50
80
130
200
300
0.2
4
60
Typ.
Max.
400
250
160
260
400
600
2.5
30
%
mA
Units
%
4.8
mA
0.4
V
SWITCHING CHARACTERISTICS
T
A
= 25°C unless otherwise specified
Symbol
t
ON
t
OFF
t
R
t
F
Parameter
Turn On Time
Turn Off Time
Output Rise Time (10%−90%)
Output Fall Time (90%−10%)
Conditions
I
C
= 2 mA, V
CE
= 10 V, R
L
= 100
W
I
C
= 2 mA, V
CE
= 10 V, R
L
= 100
W
I
C
= 2 mA, V
CE
= 10 V, R
L
= 100
W
IC = 2 mA, V
CE
= 10 V, R
L
= 100
W
Min.
Typ.
3
3
3
3
Max.
Units
ms
ms
ms
ms
ISOLATION CHARACTERISTICS
Symbol
V
ISO
R
ISO
C
ISO
Parameter
Input−Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Conditions
Freq = 60 Hz, t = 1.0 min,
I
I−O
v
10
mA
(Note 3, 4)
V
I−O
= 500 V (Note 3)
Frequency = 1 MHz
Min.
3,750
5 x 10
10
0.6
1.0
Typ.
Max.
Units
VAC
RMS
W
pF
3. Device is considered a two terminal device: Pin 1 and 2 are shorted together and Pins 3 and 4 are shorted together.
4. 3,750 VAC
RMS
for 1 minute duration is equivalent to 4,500 VAC
RMS
for 1 second duration.
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3
FODM214, FODM217 Series
TYPICAL CHARACTERISTICS
140
120
100
80
60
40
20
0
0
25
50
75
100
125
PD
LED
, LED POWER DISSIPATION (mW)
160
80
PD
C
, COLLECTOR POWER
DISSIPATION (mW)
60
40
20
0
0
25
50
75
100
125
T
A
, AMBIENT TEMPERATURE (5C)
T
A
, AMBIENT TEMPERATURE (5C)
Figure 1. Collector Power Dissipation vs. Ambient
Temperature
100
Figure 2. LED Power Dissipation vs. Ambient
Temperature
−2.4
DV
F/
DT
A
, FORWARD VOLTAGE
TEMPERATURE COEFFICIENT
(mV/5C)
1.8
2.0
I
F
, FORWARD CURRENT (mA)
−2.0
75°C
110°C
−1.6
10
-55°C
25°C
−1.2
−0.8
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
−0.4
1
10
100
V
F
, FORWARD VOLTAGE (V)
I
F
, FORWARD CURRENT (mA)
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Forward Voltage Temperature Coefficient vs.
Forward Current
30
5
0.5 mA
1 mA
3 mA
3
5 mA
7 mA
10 mA
I
C,
COLLECTOR CURRENT (mA)
V
CE,
COLLECTOR−EMITTER
VOLTAGE (V)
4
25
20
15
10
5
0
FODM217 I
F
= 5 mA
2
1
FODM214 I
F
= 1 mA
0
5
10
0
0
5
10
15
20
I
F
, FORWARD CURRENT (mA)
V
CE
, COLLECTOR−EMITTER CURRENT (V)
Figure 5. Collector Emitter Voltage vs. Forward Current
Figure 6. Collector Current vs. Collector−Emitter
Voltage
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4
FODM214, FODM217 Series
30
0.1
I
C
, COLLECTOR−CURRENT (mA)
10 V
5V
V
CE
= 0.4 V
25
20
15
10
5
0
0.0
FODM217 I
F
= 5 mA
I
C
, COLLECTOR CURRENT (A)
0.01
0.001
FODM214 I
F
= 1 mA
0.5
1.0
0.0001
0.0001
0.001
0.01
0.1
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
F
, FORWARD CURRENT (mA)
Figure 7. Collector Current vs.
Small Collector−Emitter Voltage
1E−5
1E−6
V
CE
= 48 V
1E−7
1E−8
1E−9
10 V
1E−10
1E−11
−25
5V
24 V
1000
Figure 8. Collector Current vs.
Forward Current
CTR
−
CURRENT TRANSFER RATIO (%)
I
CEO
, COLLECTOR DARK
CURRENT (A)
10 V
5V
V
CE
= 0.4 V
100
0
25
50
75
100
10
0.0001
0.001
0.01
0.1
T
A
, AMBIENT TEMPERATURE (5C)
I
F
, FORWARD CURRENT (A)
Figure 9. Collector Dark Current vs.
Ambient Temperature
0.18
100
Figure 10. Current Transfer Ratio vs.
Forward Current
V
CE(SAT),
COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C,
COLLECTOR CURRENT (mA)
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
−25
0
25
I
F
= 8 mA
I
C
= 2.4 mA
I
F
= 1 mA
I
C
= 0.2 mA
I
F
= 20 mA
I
C
= 1 mA
50
75
100
20 mA
10 mA
10
5 mA
1
1 mA
I
F
= 0.5 mA
0.1
−25
0
25
50
75
100
T
A
, AMBIENT TEMPERATURE (5C)
T
A
, AMBIENT TEMPERATURE (5C)
Figure 11. Collector−Emitter Saturation vs.
Ambient Temperature
Figure 12. Collector Current vs.
Ambient Temperature
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