EEWORLDEEWORLDEEWORLD

Part Number

Search

FQD6N50C

Description
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size2MB,9 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
Download Datasheet Parametric Compare View All

FQD6N50C Overview

Power Field-Effect Transistor, 4.5A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

FQD6N50C Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)300 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)4.5 A
Maximum drain-source on-resistance1.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)18 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
FQD6N50C / FQU6N50C
N-Channel MOSFET
March 2013
N-Channel QFET MOSFET
500
V,
4.5
A,
1.2
Description
FQD6N50C / FQU6N50C
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor
®
’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
Features
4.5
A,
500
V, R
DS(on)
=
1.2
(Max)
@V
GS
= 10 V,
I
D
=
2.25
A
• Low Gate Charge (Typ.
19
nC)
• Low Crss (Typ.
15
pF)
• 100% Avalanche Tested
D
D
!
G
S
D-PAK
FQD Series
I-PAK
G D S
FQU Series
G
!
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQD6N50C / FQU6N50C
500
4.5
2.7
18
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C)*
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
4.5
6.1
4.5
2.5
61
0.49
-55 to +150
300
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
-
-
-
Max
2.05
50
110
Unit
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2004 Fairchild Semiconductor Corporation
FQD6N50C /
FQU6N50C
Rev. C0
www.fairchildsemi.com

FQD6N50C Related Products

FQD6N50C FQU6N50CTU
Description Power Field-Effect Transistor, 4.5A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET MOSFET N-CH 500V 4.5A IPAK
Some information collected
Some information collected about PCB...
ailover2001 Power technology
World Cup in Numbers
[align=left][url=https://www.eeworld.com.cn/wltx/2018/ic-news071020955.html][size=5]The World Cup is about more than just football[/size][/url][/align] [align=left][color=#333333][font="][size=18px]Da...
EEWORLD社区 Integrated technical exchanges
Terasic DE2I-150 Hello PCIex (Part 1)
[i=s]This post was last edited by CMika on 2014-12-25 16:06[/i] [p=22, null, left][color=#4d4b4b][font=宋体, Arial, Helvetica, sans-serif]The DE2I-150 board is still very low-key. It is not quite approp...
CMika FPGA/CPLD
Some issues that students who are determined to engage in embedded technology need to pay attention to
Source: Zhou Gong's Sina Blog [url=http://blog.sina.com.cn/s/blog_5e8facd20100f9tx.html]http://blog.sina.com.cn/s/blog_5e8facd20100f9tx.html[/url] What to learn first and what to learn later depends e...
小瑞 Embedded System
National standard DMB_TH terrestrial high-definition digital signal increases coverage of terrestrial high-definition machine Blu-ray high-definition machine Haimei HD100 strikes hard
With the grand opening of the Beijing Olympic Games, the highly anticipated CCTV HD Comprehensive Channel was officially launched on May 1, 2008. The launch of CCTV HD Channel is a milestone in the de...
tvcc高清 Creative Market
Inrush current control method for switching power supply
Methods for suppressing various types of inrush current in switching power supply design...
funydiy Power technology

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1136  1976  2815  1223  908  23  40  57  25  19 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号