Silicon Dual Schottky Diode
q
DBS mixer application to 12 GHz
q
Low noise figure
q
Medium barrier type
BAT 14-099
ESD: Electrostatic discharge
sensitive device, observe handling precautions!
Type
BAT 14-099
Marking Ordering Code
(tape and reel)
S9
Q62702-A3461
Pin Configuration
Package
1)
SOT-143
Maximum Ratings per Diode
Parameter
Reverse voltage
Forward current
Power dissipation,
T
S
≤
55 ˚C
Storage temperature range
Operating temperature range
Thermal Resistance
Junction – ambient
2)
Junction – soldering point
R
th JA
R
th JS
≤
1090
≤
930
Symbol
V
R
I
F
P
tot
T
stg
T
op
Values
4
90
100
– 55 … + 150
Unit
V
mA
mW
– 55 … + 150 ˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm
×
16.7 mm to 0.7 mm.
Semiconductor Group
1
02.96
BAT 14-099
Electrical Characteristics per Diode
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Breakdown voltage
I
R
= 5
µ
A
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
Forward voltage matching
I
F
= 10 mA
Diode capacitance
V
R
= 0,
f=
1 MHz
Forward resistance
I
F
= 10 mA / 50 mA
Symbol
min.
V
BR
V
F
–
–
∆
V
F
Values
typ.
–
max.
–
4
Unit
V
0.43
0.55
–
–
5.5
–
–
10
0.35
–
mV
pF
Ω
–
–
–
C
T
R
F
Semiconductor Group
2
京公网安备 11010802033920号
EEWORLD
