HiRel
Silicon Schottky Diode
Features
¥
HiRel
Discrete and Microwave Semiconductor
¥ Medium barrier diodes for detector and mixer
applications
¥ Hermetically sealed microwave package
¥
qualified
¥ ESA/SCC Detail Spec. No.: 5106/014
ESD:
E
lectro
s
tatic
d
ischarge sensitive device,
observe handling precautions!
T
BAT 15
T1
Type
BAT 15-013 (ql)
Marking
-
Ordering Code
see below
Pin Configuration
Package
T
BAT 15-014 (ql)
BAT 15-033 (ql)
BAT 15-034 (ql)
BAT 15-043 (ql)
BAT 15-044 (ql)
BAT 15-063 (ql)
BAT 15-064 (ql)
BAT 15-073 (ql)
BAT 15-074 (ql)
BAT 15-093 (ql)
BAT 15-094 (ql)
BAT 15-103 (ql)
BAT 15-104 (ql)
BAT 15-113 (ql)
BAT 15-114 (ql)
BAT 15-123 (ql)
BAT 15-124 (ql)
(ql) Quality Level:
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
see below
see below
see below
see below
see below
see below
see below
see below
see below
see below
see below
see below
see below
see below
see below
see below
see below
see BAT15-013
see BAT15-013
see BAT15-013
see BAT15-013
see BAT15-013
see BAT15-013
see BAT15-013
see BAT15-013
see BAT15-013
see BAT15-013
see BAT15-013
see BAT15-013
see BAT15-013
see BAT15-013
see BAT15-013
see BAT15-013
see BAT15-013
Ordering Code: Q62702A1178
Ordering Code: on request
Ordering Code: on request
Ordering Code: Q62702A1180
T1
T
T1
T
T1
T
T1
T
T1
T
T1
T
T1
T
T1
T
T1
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
(see
Chapter Order Instructions
for ordering example)
Semiconductor Group
1
Draft A03 1998-04-01
BAT 15
Table 1
Parameter
Maximum Ratings
Symbol
Limit Values
3
100
100
50
50
50
Unit
V
mA
Reverse voltage
Forward current
BAT15-013, -014, -033, -034
BAT15-043, -044, -063, -064
BAT15-073, -074, -093, -094
BAT15-103, -104, -113, -114
BAT15-123, -124
Power dissipation
BAT15-013, -014, -033, -034
BAT15-043, -044, -063, -064
BAT15-073, -074, -093, -094
BAT15-103, -104, -113, -114
BAT15-123, -124
Operating temperature range
Storage temperature range
Soldering temperature
Burn-out energy
1)
BAT15-013, -014, -033, -034
BAT15-043, -044, -063, -064
BAT15-073, -074, -093, -094
BAT15-103, -104, -113, -114
BAT15-123, -124
1)
V
R
I
F
P
tot
100
100
50
50
50
mW
T
op
T
stg
T
sol
E
B
-
55 to + 150
-
65 to + 175
+ 220
5.0
5.0
2.0
2.0
1.0
°
C
°
C
°
C
Erg
Quoted for a single discharge of torry line during the first 2.4 ns current flow in the forward direction. General
criterion for burn-out energy is a 3 dB increase in noise figure.
Semiconductor Group
2
Draft A03 1998-04-01
BAT 15
Electrical Characteristics
Table 2
Parameter
Breakdown voltage
I
R
= 10
m
A
Reverse current
V
R
= 2 V
BAT15-013, -014, -033, -034
BAT15-043, -044, -063, -064
BAT15-073, -074, -093, -094
BAT15-103, -104, -113, -114
BAT15-123, -124
Forward voltage 1
I
F1
= 0.01 mA
BAT15-013, -014, -033, -034
BAT15-043, -044, -063, -064
BAT15-073, -074, -093, -094
BAT15-103, -104, -113, -114
BAT15-123, -124
Forward voltage 2
I
F2
= 1 mA
BAT15-013, -014, -033, -034
BAT15-043, -044, -063, -064
BAT15-073, -074, -093, -094
BAT15-103, -104, -113, -114
BAT15-123, -124
DC Characteristics
at
T
A
= 25
°
C unless otherwise specified
Symbol
min.
Limit Values
typ.
-
max.
-
V
m
A
-
-
-
-
-
-
-
-
-
-
5
5
5
1
1
V
-
-
-
-
-
-
-
-
-
-
0.15
0.17
0.18
0.19
0.20
V
-
-
-
-
-
0.23
0.27
0.29
0.30
0.31
0.28
0.30
0.31
0.32
0.33
3
Unit
V
(BR)
I
R
V
F1
V
F2
Semiconductor Group
3
Draft A03 1998-04-01
BAT 15
Table 2
Parameter
DC Characteristics
at
T
A
= 25
°
C unless otherwise specified (contÕd)
Symbol
min.
Limit Values
typ.
max.
W
-
-
-
-
-
-
-
-
-
3.0
4.0
3.5
4.5
4.5
5.5
6.0
7.0
8.0
3.5
4.5
4.0
5.0
5.5
6.5
7.0
8.0
9.0
Unit
Series resistance
2)
I
F1
= 10 mA,
I
F2
= 50 mA
BAT15-013, -014
BAT15-033, -034
BAT15-043, -044
BAT15-063, -064
BAT15-073, -074
BAT15-093, -094
BAT15-103, -104
BAT15-113, -114
BAT15-123, -124
2)
R
F
R
F
D
V
F
------------------------
W
-
=
Ð
3
40
´
10
Semiconductor Group
4
Draft A03 1998-04-01
BAT 15
Table 3
Parameter
AC Characteristics
at
T
A
= 25
°
C unless otherwise specified
Symbol
min.
Limit Values
typ.
max.
pF
-
-
-
-
-
NF
0.35
0.30
0.27
0.23
0.20
0.60
0.35
0.30
0.25
0.22
dB
Unit
Total capacitance
V
R
= 0 V,
f
= 1 MHz
BAT15-013, -014, -033, -034
BAT15-043, -044, -063, -064
BAT15-073, -074, -093, -094
BAT15-103, -104, -113, -114
BAT15-123, -124
Noise figure
I.F. = 30 MHz
LO power = 0 dBm
LO = 9.375 GHz
BAT15-013, -014
BAT15-033, -034
BAT15-043, -044
BAT15-063, -064
BAT15-073, -074
BAT15-093, -094
BAT15-103, -104
BAT15-113, -114
BAT15-123, -124
C
T
-
-
-
-
-
-
-
-
-
5.3
6.3
5.3
6.3
5.3
6.3
5.7
7.2
8.0
5.5
6.5
5.5
6.5
5.5
6.5
6.0
7.5
9.0
Semiconductor Group
5
Draft A03 1998-04-01
京公网安备 11010802033920号
EEWORLD
