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BST50T/R

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size158KB,5 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BST50T/R Overview

Transistor

BST50T/R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.5 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)

BST50T/R Related Products

BST50T/R BST51T/R BST52T/R
Description Transistor Transistor Transistor
Is it Rohs certified? incompatible incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknown unknown
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A
Configuration DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 1000 1000 1000
JESD-609 code e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 1 W 1 W 1 W
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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