|
BT151S650RT/R |
BT151M650R |
BT151S500RT/R |
BT151S800RT/R |
| Description |
Silicon Controlled Rectifier, 7500mA I(T), 650V V(DRM) |
Silicon Controlled Rectifier, 7500mA I(T), 650V V(DRM) |
Silicon Controlled Rectifier, 7500mA I(T), 500V V(DRM) |
Silicon Controlled Rectifier, 7500mA I(T), 800V V(DRM) |
| Is it Rohs certified? |
conform to |
incompatible |
conform to |
conform to |
| Maker |
Philips Semiconductors (NXP Semiconductors N.V.) |
Philips Semiconductors (NXP Semiconductors N.V.) |
Philips Semiconductors (NXP Semiconductors N.V.) |
Philips Semiconductors (NXP Semiconductors N.V.) |
| Reach Compliance Code |
unknow |
unknown |
unknown |
unknow |
| Nominal circuit commutation break time |
70 µs |
70 µs |
70 µs |
70 µs |
| Maximum DC gate trigger current |
15 mA |
15 mA |
15 mA |
15 mA |
| Maximum DC gate trigger voltage |
1.5 V |
1.5 V |
1.5 V |
1.5 V |
| Maximum holding current |
20 mA |
20 mA |
20 mA |
20 mA |
| Maximum leakage current |
0.5 mA |
0.5 mA |
0.5 mA |
0.5 mA |
| On-state non-repetitive peak current |
100 A |
100 A |
100 A |
100 A |
| Maximum on-state voltage |
1.75 V |
1.75 V |
1.75 V |
1.75 V |
| Maximum on-state current |
7500 A |
7500 A |
7500 A |
7500 A |
| Maximum operating temperature |
125 °C |
125 °C |
125 °C |
125 °C |
| Off-state repetitive peak voltage |
650 V |
650 V |
500 V |
800 V |
| surface mount |
YES |
YES |
YES |
YES |
| Trigger device type |
SCR |
SCR |
SCR |
SCR |