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5SDD11T2600

Description
Rectifier Diode, 1 Phase, 1 Element, 1285A, 2600V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size74KB,5 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric View All

5SDD11T2600 Overview

Rectifier Diode, 1 Phase, 1 Element, 1285A, 2600V V(RRM), Silicon,

5SDD11T2600 Parametric

Parameter NameAttribute value
MakerABB
Reach Compliance Codecompli
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current16000 A
Number of components1
Phase1
Number of terminals2
Maximum output current1285 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2600 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
5SDD 11T2800
5SDD 11T2800
Old part no. DV 827C-1100-28
Rectifier Diode
Properties
§
§
§
§
Industry standard housing
Suitable for parallel operation
High operating temperature
Low forward voltage drop
Key Parameters
= 2 800
V
RRM
= 1 285
I
FAVm
= 15 000
I
FSM
= 0.933
V
TO
= 0.242
r
T
V
A
A
V
mΩ
Types
V
RRM
5SDD 11T2800
5SDD 11T2600
Conditions:
2 800 V
2 600 V
T
j
= -40 ÷ 160 °C,
half sine waveform,
f = 50 Hz
Mechanical Data
F
m
m
D
S
D
a
Mounting force
Weight
Surface creepage
distance
Air strike distance
10 ± 2 kN
0.20 kg
20 mm
14 mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250,
http://www.abb.com/semiconductors
TS - DV/272/08 Jul-10
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