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BAT15-03W

Description
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size68KB,4 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BAT15-03W Overview

SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE

BAT15-03W Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionR-PDSO-G2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage4 V
ConfigurationSINGLE
Maximum diode capacitance0.35 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.41 V
frequency bandX BAND
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current100 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.1 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Schottky barrier typeLOW BARRIER
BAT 15-03W
Silicon Schottky Diode
• DBS mixer applications to 12 GHz
• Low noise figure
• Low barrier type
ESD: ElectroStatic Discharge
sensitive device, observe handling precautions!
Type
Marking Ordering Code
Q62702-
Q62702-A1104
Pin Configuration
1=A
2=C
Package
SOD-323
BAT 15-03W P/white
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total power dissipation
T
S
= 70°C
Operating temperature range
Storage temperature
Thermal Resistance
Junction ambient
1)
Symbol
Values
4
100
100
- 55 ... + 150
- 55 ... + 150
770
690
Unit
V
mA
mW
°C
V
R
I
F
P
tot
T
op
T
stg
R
thJA
R
thJS
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group
1
Mar-19-1996

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BAT15-03W Q62702-A1104
Description SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
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