Silicon Dual Schottky Diode
BAT 15-099
Preliminary Data
Features
q
DBS mixer application to 12 GHz
q
Low noise figure
q
Low barrier type
ESD: Electrostatic discharge
sensitive device, observe handling precautions!
Type
BAT 15-099
Marking
S5
Ordering Code
(tape and reel)
Q62702-A66
Pin Configuration
Package
1)
P-SOT-143-4-6
Maximum Ratings
Parameter
Reverse voltage
Forward current
Power dissipation,
T
S
≤
55 ˚C
Storage temperature range
Operating temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
1)
2)
Symbol
V
R
I
F
P
tot
T
stg
T
op
Values
4
110
100
– 55 … + 150
Unit
V
mA
mW
– 55 … + 150 ˚C
R
th JA
R
th JS
≤
1090
≤
930
K/W
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm
×
16.7 mm
×
0.7 mm.
Semiconductor Group
1
01.97
BAT 15-099
Electrical Characteristics per Diode
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Breakdown voltage
I
R
= 5
µ
A
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
Forward voltage matching
I
F
= 10 mA
Diode capacitance
V
R
= 0,
f
= 1 MHz
Forward resistance
I
F
= 10 mA/50 mA
Symbol
min.
V
(BR)
V
F
–
–
∆V
F
C
T
R
F
–
–
–
0.23
0.32
–
–
5.5
–
–
20
0.35
–
mV
pF
Ω
4
Values
typ.
–
max.
–
V
Unit
Semiconductor Group
2
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