Silicon Crossover Ring Quad Schottky Diode
q
Low barrier diode for double balanced mixers,
BAT 15-099R
phase detectors and modulators
ESD: Electrostatic discharge
sensitive device, observe handling precautions!
Type
Marking Ordering Code
(tape and reel)
Q62702-A0043
Pin Configuration
Package
1)
SOT-143
BAT 15-099R S6
Maximum Ratings per Diode
Parameter
Forward current
Power dissipation,
T
S
≤
70 ˚C
Storage temperature range
Operating temperature range
Thermal Resistance per Diode
Junction – ambient
2)
Junction – soldering point
R
th JA
R
th JS
≤
1020
≤
780
Symbol
I
F
P
tot
T
stg
T
op
Values
110
100
– 55 … + 150
Unit
mA
mW
– 55 … + 150 ˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm
×
16.7 mm to 0.7 mm.
Semiconductor Group
1
02.96
BAT 15-099R
Electrical Characteristics per Diode
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
Forward voltage matching
1)
I
F
= 10 mA
Diode capacitance
V
R
= 0,
f=
1 MHz
Forward resistance
I
F
= 10 mA / 50 mA
Symbol
min.
V
F
–
–
∆
V
F
Values
typ.
0.23
0.32
–
0.38
5.5
max.
Unit
V
–
–
20
–
–
mV
pF
Ω
–
–
–
C
T
R
F
Forward current
I
F
=
f
(V
F
)
Forward current
I
F
=
f
(T
S
;
T
A
*)
*Package mounted on alumina
1)
∆
V
F
is the difference between the lowest and the highest
V
F
in the component.
Semiconductor Group
2
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