Nominally regulated to 5.95V. Connect a 1.0 µF to 2.2 µF decoupling capacitor from
this pin to ground.
Supply pin to the device. Nominal input range is 6V to 42V.
To enable the IC apply a logic high signal to this pin greater than 1.26V typical or
leave floating. To disable the part, ground the EN pin.
Internally connected to the regulation, over-voltage, and short-circuit comparators.
The regulation setting is 0.6V at this pin. Connect to feedback resistor divider between
the output and ground to set the output voltage.
Ground for all internal bias and reference circuitry. Should be connected to PGND at
a single point.
An internal 7.7 µA current source charges an external capacitor to provide the soft-
start function.
An external resistor from VIN to this pin sets the high-side switch on-time.
Monitors current through the low-side switch and triggers current limit operation if the
inductor valley current exceeds a user defined value that is set by R
LIM
and the Sense
current, I
LIM-TH
, sourced out of this pin during operation.
Switch pin of controller and high-gate driver lower supply rail. A boost capacitor is
also connected between this pin and BST pin
Gate drive signal to the high-side NMOS switch. The high-side gate driver voltage is
supplied by the differential voltage between the BST pin and SW pin.
High-gate driver upper supply rail. Connect a 0.33 µF-0.47 µF capacitor from SW pin
to this pin. An internal diode charges the capacitor during the high-side switch off-
time. Do not connect to an external supply rail.
Gate drive signal to the low-side NMOS switch. The low-side gate driver voltage is
supplied by VCC.
Synchronous rectifier MOSFET source connection. Tie to power ground plane.
Should be tied to SGND at a single point.
Exposed die attach pad should be connected directly to SGND. Also used to help
dissipate heat out of the IC.
4
FB
Feedback
5,9
6
7
8
SGND
SS
RON
ILIM
Signal Ground
Soft-Start
On-time Control
Current Limit
10
11
SW
HG
Switch Node
High-Side Gate Drive
Connection for Bootstrap
Capacitor
Low-Side Gate Drive
Power Ground
Exposed Pad
12
BST
13
14
EP
LG
PGND
EP
www.national.com
2
LM3150
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
VIN, RON to GND
SW to GND
BST to SW
BST to GND
-0.3V to 47V
-3V to 47V
-0.3V to 7V
-0.3V to 52V
All Other Inputs to GND
ESD Rating (Note 2)
Storage Temperature Range
-0.3V to 7V
2 kV
-65°C to +150°C
(Note 1)
6V to 42V
−40°C to + 125°C
0V to 5V
Operating Ratings
V
IN
Junction Temperature Range (T
J
)
EN
Limits in standard type are for T
J
= 25°C only; limits in
boldface type
apply over the
junction temperature (T
J
) range of -40°C to +125°C. Minimum and Maximum limits are guaranteed through test, design, or statistical
correlation. Typical values represent the most likely parametric norm at T
J
= 25°C, and are provided for reference purposes only.
Unless otherwise stated the following conditions apply: V
IN
= 18V.
Symbol
Start-Up Regulator, VCC
VCC
VIN - VCC
I
VCCL
VCC
UVLO
VCC
UVLO-HYS
t
CC-UVLO-D
I
IN
I
IN-SD
GATE Drive
I
Q-BST
R
DS-HG-Pull-Up
R
DS-HG-Pull-Down
R
DS-LG-Pull-Up
R
DS-LG-Pull-Down
Soft-Start
I
SS
I
SS-DIS
Current Limit
I
LIM-TH
ON/OFF Timer
V
IN
= 10V, R
ON
= 100 kΩ,
V
FB
= 0.6V
t
ON
ON Timer Pulse Width
V
IN
= 18V, R
ON
= 100 kΩ,
V
FB
= 0.6V
V
IN
= 42V, R
ON
= 100 kΩ,
V
FB
= 0.6V
t
ON-MIN
t
OFF
Enable Input
V
EN
V
EN-HYS
EN Pin Input Threshold Trip Point
EN Pin Threshold Hysteresis
V
EN
Rising
V
EN
Falling
1.14
1.20
120
1.26
V
mV
ON Timer Minimum Pulse Width
OFF Timer Minimum Pulse Width
(Note 4)
1.02
0.62
0.36
200
370
525
ns
ns
µs
Current Limit Sense Pin Source Current
75
85
95
µA
SS Pin Source Current
SS Pin Discharge Current
V
SS
= 0V
5.9
7.7
200
9.5
µA
µA
Boost Pin Leakage
HG Drive Pull–Up On-Resistance
HG Drive Pull–Down On-Resistance
LG Drive Pull–Up On-Resistance
LG Drive Pull–Down On-Resistance
V
BST
– V
SW
= 6V
I
HG
Source = 200 mA
I
HG
Sink = 200 mA
I
LG
Source = 200 mA
I
LG
Sink = 200 mA
2
5
3.4
3.4
2
nA
Ω
Ω
Ω
Ω
VIN - VCC Dropout Voltage
VCC Current Limit (Note 3)
VCC Under-Voltage Lockout Threshold
(UVLO)
VCC UVLO Hysteresis
VCC UVLO Filter Delay
Input Operating Current
Input Operating Current, Device
Shutdown
No Switching, V
FB
= 1V
V
EN
= 0V
C
VCC
= 1 µF, 0 mA to 40 mA
I
VCC
= 2 mA, V
IN
= 5.5V
I
VCC
= 30 mA, V
IN
= 5.5V
VCC = 0V
VCC Increasing
VCC Decreasing
65
4.75
5.65
5.95
40
330
100
5.1
475
3
3.5
32
5
55
5.40
6.25
V
mV
mA
V
mV
µs
mA
µA
Parameter
Conditions
Min
Typ
Max
Units
Electrical Characteristics
3
www.national.com
LM3150
Symbol
V
FB
V
FB-OV
I
FB
Boost Diode
V
f
Parameter
In-Regulation Feedback Voltage
Feedback Over-Voltage Threshold
Feedback Bias Current
Forward Voltage
Conditions
V
SS
> 0.6V
Min
0.588
0.690
Typ
0.600
0.720
20
Max
0.612
0.748
Units
V
V
nA
Regulation and Over-Voltage Comparator
I
BST
= 2 mA
I
BST
= 30 mA
0.7
1
165
15
40
V
Thermal Characteristics
T
SD
Thermal Shutdown
Thermal Shutdown Hysteresis
Rising
Falling
4 Layer JEDEC Printed Circuit
Board, 9 Vias, No Air Flow
2 Layer JEDEC Printed Circuit
Board. No Air Flow
No Air Flow
°C
°C
θ
JA
θ
JC
Junction to Ambient
°C/W
140
4
°C/W
Junction to Case
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but does not guarantee specific performance limits. For guaranteed specifications and conditions, see the Electrical Characteristics.
Note 2:
The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. Test Method is per JESD-22-A114.
Note 3:
VCC provides self bias for the internal gate drive and control circuits. Device thermal limitations limit external loading.
Note 4:
See Applications section for minimum on-time when using MOSFETs connected to gate drivers.
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