K6F4016U6M-ZI10 datasheet, PDF

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K6F4016U6M-ZI10: DescriptionStandard SRAM, 256KX16, 100ns, CMOS, PBGA48, 8.20 X 8.70 MM, MICRO, BGA-48; Categorystorage storage; File Size168KB，9 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K6F4016U6M-ZI10 Overview

Standard SRAM, 256KX16, 100ns, CMOS, PBGA48, 8.20 X 8.70 MM, MICRO, BGA-48

K6F4016U6M-ZI10 Parametric

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	VFBGA,
Contacts	48
Reach Compliance Code	unknow
ECCN code	3A991.B.2.A
Maximum access time	100 ns
JESD-30 code	R-PBGA-B48
length	8.7 mm
memory density	4194304 bi
Memory IC Type	STANDARD SRAM
memory width	16
Number of functions	1
Number of terminals	48
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX16
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	0.94 mm
Maximum supply voltage (Vsup)	3.3 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
width	8.2 mm

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K6F4016U6M Family

Document Title

CMOS SRAM

256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Revision History

Revision No. History

0.0

1.0

Initial Draft

Finalize

- Change V

1.0V to 1.5V

- Change I

test condition ; V

=1.2V to 1.5V

Draft Date

October 26, 1998

May 13, 1999

Remark

Preliminary

Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

-1-

Revision 1.0

May 1999

K6F4016U6M-ZI10 Related Products

	K6F4016U6M-ZI10	K6F4016U6M-ZI70
Description	Standard SRAM, 256KX16, 100ns, CMOS, PBGA48, 8.20 X 8.70 MM, MICRO, BGA-48	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 8.20 X 8.70 MM, MICRO, BGA-48
Maker	SAMSUNG	SAMSUNG
Parts packaging code	BGA	BGA
package instruction	VFBGA,	VFBGA,
Contacts	48	48
Reach Compliance Code	unknow	unknown
ECCN code	3A991.B.2.A	3A991.B.2.A
Maximum access time	100 ns	70 ns
JESD-30 code	R-PBGA-B48	R-PBGA-B48
length	8.7 mm	8.7 mm
memory density	4194304 bi	4194304 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM
memory width	16	16
Number of functions	1	1
Number of terminals	48	48
word count	262144 words	262144 words
character code	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C
organize	256KX16	256KX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	VFBGA	VFBGA
Package shape	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified
Maximum seat height	0.94 mm	0.94 mm
Maximum supply voltage (Vsup)	3.3 V	3.3 V
Minimum supply voltage (Vsup)	2.7 V	2.7 V
Nominal supply voltage (Vsup)	3 V	3 V
surface mount	YES	YES
technology	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL
Terminal form	BALL	BALL
Terminal pitch	0.75 mm	0.75 mm
Terminal location	BOTTOM	BOTTOM
width	8.2 mm	8.2 mm

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