K9F1208Q0A-DCB0,DIB0
K9F1208U0A-YCB0,YIB0
K9F1208U0A-DCB0,DIB0
K9F1216Q0A-DCB0,DIB0
K9F1216U0A-YCB0,YIB0
K9F1216U0A-DCB0,DIB0
K9F1208U0A-VCB0,VIB0
Preliminary
FLASH MEMORY
Document Title
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0
0.1
Initial issue.
TBGA(K9F12XXX0A-DCB0/DIB0) size information is changed.
(before) 9 x 11 /0.8mm pitch , Width 1.0 mm
(after ) To Be Decided.
TBGA(K9F12XXX0A-DCB0/DIB0) size information is changed.
(before) 9 x 11 /0.8mm pitch , Width 1.0 mm, to
(after) 8.5 x 15 /0.8mm pitch, Width 1.0mm
Draft Date
Apr. 25th 2002
May. 9th 2002
Remark
Preliminary
0.2
July, 10th 2002
Note : For more detailed features and specifications including FAQ, please refer to Samsung’ Flash web site.
s
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
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K9F1208Q0A-DCB0,DIB0
K9F1208U0A-YCB0,YIB0
K9F1208U0A-DCB0,DIB0
K9F1216Q0A-DCB0,DIB0
K9F1216U0A-YCB0,YIB0
K9F1216U0A-DCB0,DIB0
K9F1208U0A-VCB0,VIB0
Preliminary
FLASH MEMORY
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9F1208Q0A-D
K9F1216Q0A-D
K9F1208U0A-Y
K9F1208U0A-D
K9F1208U0A-V
K9F1216U0A-Y
K9F1216U0A-D
2.7 ~ 3.6V
X16
X8
Vcc Range
1.65 ~ 1.95V
Organization
X8
X16
TSOP1
TBGA
WSOP1
TSOP1
TBGA
PKG Type
TBGA
FEATURES
•
Voltage Supply
- 1.8V device(K9F12XXQ0A) : 1.65~1.95V
- 3.3V device(K9F12XXU0A) : 2.7 ~ 3.6 V
•
Organization
- Memory Cell Array
- X8 device(K9F1208X0A) : (32M + 1024K)bit x 8 bit
- X16 device(K9F1216X0A) : (16M + 512K)bit x 16bit
- Data Register
- X8 device(K9F1208X0A) : (512 + 16)bit x 8bit
- X16 device(K9F1216X0A) : (256 + 8)bit x16bit
•
Automatic Program and Erase
- Page Program
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Block Erase :
- X8 device(K9F1208X0A) : (16K + 512)Byte
- X16 device(K9F1216X0A) : ( 8K + 256)Word
•
Page Read Operation
- Page Size
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Random Access
: 12µs(Max.)
- Serial Page Access : 50ns(Min.)
•
Fast Write Cycle Time
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
•
Command/Address/Data Multiplexed I/O Port
•
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
•
Reliable CMOS Floating-Gate Technology
- Endurance
: 100K Program/Erase Cycles
- Data Retention : 10 Years
•
Command Register Operation
•
Intelligent Copy-Back
•
Unique ID for Copyright Protection
•
Package
- K9F12XXU0A-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F12XXX0A-DCB0/DIB0
63- Ball TBGA
- K9F1208U0A-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
* K9F1208U0A-V(WSOPI ) is the same device as
K9F1208U0A-Y(TSOP1) except package type.
GENERAL DESCRIPTION
Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V
Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation programs
the 528-byte(X8 device) or 264-word(X16 device) page in typical 200µs and an erase operation can be performed in typical 2ms on a
16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word. The I/O pins serve
as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase
functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems
can take advantage of the K9F12XXX0A′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting
Code) with real time mapping-out algorithm.
The K9F12XXX0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
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