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Datasheet> All Categories > storage> storage> M364C1680BJ0-C50
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M364C1680BJ0-C50

Description
Fast Page DRAM Module, 16MX64, 50ns, CMOS, DIMM-168
Categorystorage    storage   
File Size429KB，20 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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M364C1680BJ0-C50 Overview

Fast Page DRAM Module, 16MX64, 50ns, CMOS, DIMM-168

M364C1680BJ0-C50 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeDIMM
package instructionDIMM, DIMM168
Contacts168
Reach Compliance Codecompli
ECCN codeEAR99
access modeFAST PAGE
Maximum access time50 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-XDMA-N168
memory density1073741824 bi
Memory IC TypeFAST PAGE DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals168
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM168
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply5 V
Certification statusNot Qualified
refresh cycle8192
Maximum standby current0.03 A
Maximum slew rate1.92 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL

M364C1680BJ0-C50 Preview

DRAM MODULE
M364C160(8)0BJ(T)0-C
Buffered 16Mx64 DIMM
(16Mx4 base)
Revision 0.1
June 1998
DRAM MODULE
Revision History
Version 0.0 (Sept. 1997)
M364C160(8)0BJ(T)0-C
• Removed two AC parameters t
CACP
(access time from CAS) and t
AAP
(access time from col. addr.) in
AC CHARACTERISTICS.
Version 0.1 (June 1998)
• The 3rd. generation of 64M DRAM components are applied for this module.
DRAM MODULE
M364C160(8)0BJ(T)0-C
M364C160(8)0BJ(T)0-C Fast Page Mode
16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 5V
GENERAL DESCRIPTION
The Samsung M364C160(8)0BJ(T)0-C is a 16Mx64bits
Dynamic RAM high density memory module. The Samsung
M364C160(8)0BJ(T)0-C consists of sixteen CMOS 16Mx4bits
DRAMs in SOJ/TSOP-II 400mil packages and two 16 bits
driver IC in TSSOP package mounted on a 168-pin glass-
epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is
mounted on the printed circuit board for each DRAM. The
M364C160(8)0BJ(T)0-C is a Dual In-line Memory Module and
is intended for mounting into 168 pin edge connector sockets.
FEATURES
• Part Identification
Part number
M364C1600BJ0-C
M364C1600BT0-C
M364C1680BJ0-C
M364C1680BT0-C
•
•
•
•
•
•
•
•
PKG
SOJ
TSOP
SOJ
TSOP
8K
4K/64ms
8K/64ms
Ref.
4K
CBR Ref.
ROR Ref.
4K/64ms
PERFORMANCE RANGE
Speed
-C50
-C60
t
RAC
50ns
60ns
t
CAC
18ns
20ns
t
RC
90ns
110ns
t
PC
35ns
40ns
Fast Page Mode Operation
CAS-before-RAS Refresh capability
RAS-only and Hidden refresh capability
TTL compatible inputs and outputs
Single 5V±10% power supply
JEDEC standard pinout & Buffered PDpin
Buffered input except RAS and DQ
PCB : Height(1250mil), double sided component
PIN CONFIGURATIONS
Pin Front Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
V
SS
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
DQ7
*DQ8
V
SS
DQ9
DQ10
DQ11
DQ12
DQ13
V
CC
DQ14
DQ15
DQ16
*DQ17
V
SS
RSVD
RSVD
V
CC
W0
CAS0
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
Front
CAS2
RAS0
OE0
V
SS
A0
A2
A4
A6
A8
A10
A12
V
CC
RFU
RFU
V
SS
OE2
RAS2
CAS4
CAS6
W2
V
CC
RSVD
RSVD
DQ18
DQ19
V
SS
DQ20
DQ21
Pin
Front
Pin
Back
Pin
Back
Pin Back
DQ58
DQ59
V
CC
DQ60
RFU
RFU
RFU
RFU
DQ61
*DQ62
DQ63
V
SS
DQ64
DQ65
DQ66
DQ67
V
CC
DQ68
DQ69
DQ70
*DQ71
V
SS
PD2
PD4
PD6
PD8
ID1
V
CC
57 DQ22 85
V
SS
113 CAS3 141
58 DQ23 86 DQ36 114 *RAS1 142
87 DQ37 115 RFU 143
V
CC
59
60 DQ24 88 DQ38 116 V
SS
144
61 RFU 89 DQ39 117
A1
145
62 RFU 90
V
CC
118
A3
146
63 RFU 91 DQ40 119
A5
147
64 RFU 92 DQ41 120
A7
148
65 DQ25 93 DQ42 121
A9
149
66 *DQ26 94 DQ43 122 A11 150
67 DQ27 95 *DQ44 123 *A13 151
68
V
SS
124 V
CC
152
96
V
SS
69 DQ28 97 DQ45 125 RFU 153
70 DQ29 98 DQ46 126
B0
154
71 DQ30 99 DQ47 127 V
SS
155
72 DQ31 100 DQ48 128 RFU 156
73
V
CC
101 DQ49 129 *RAS3 157
74 DQ32 102 V
CC
130 CAS5 158
75 DQ33 103 DQ50 131 CAS7 159
76 DQ34 104 DQ51 132 PDE 160
77 *DQ35 105 DQ52 133 V
CC
161
V
SS
106 *DQ53 134 RSVD 162
78
79
PD1 107 V
SS
135 RSVD 163
80
PD3 108 RSVD 136 DQ54 164
81
PD5 109 RSVD 137 DQ55 165
82
PD7 110 V
CC
138 V
SS
166
83
ID0 111 RFU 139 DQ56 167
84
V
CC
112 CAS1 140 DQ57 168
PIN NAMES
Pin Names
A0, B0, A1 - A11
A0, B0, A1 - A12
DQ0 - DQ71
W0, W2
OE0, OE2
RAS0, RAS2
CAS0 - CAS7
V
CC
V
SS
NC
PDE
PD1 - 8
ID0 - 1
RSVD
RFU
Function
Address Input(4K ref.)
Address Input(8K ref.)
Data In/Out
Read/Write Enable
Output Enable
Row Address Strobe
Column Address Strobe
Power(+5V)
Ground
No Connection
Presence Detect Enable
Presence Detect
ID bit
Reserved Use
Reserved for Future Use
Pins marked
′
*
′
are not used in this module.
PD & ID Table
Pin
PD1
PD2
PD3
PD4
PD5
PD6
PD7
PD8
ID0
ID1
50NS
1
1
1
1
0
0
0
1
0
0
60NS
1
1
1
1
0
1
1
1
0
0
NOTE : A12 is used for only M364C1680BJ(T)0-C (8K Ref.)
PD Note :PD & ID Terminals must each be pulled up through a resistor to V
CC
at the next higher
level assembly. PDs will be either open (NC) or driven to V
SS
via on-board buffer circuits.
PD : 0 for Vol of Drive IC & 1 for N.C
ID Note : IDs will be either open (NC) or connected directly to V
SS
without a buffer.
ID : 0 for Vss & 1 for N.C
DRAM MODULE
FUNCTIONAL BLOCK DIAGRAM
RAS0
W0
OE0
CAS0
A0
A1-A11(A12)
U0
M364C160(8)0BJ(T)0-C
RAS2
W2
OE2
CAS4
B0
A1-A11(A12)
DQ0
DQ1
DQ2
DQ3
DQ0
DQ1
DQ2
DQ3
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CAS5
DQ0
DQ1
DQ2
DQ3
DQ0
DQ1
DQ2
DQ3
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
CAS6
DQ0
DQ1
DQ2
DQ3
DQ0
DQ1
DQ2
DQ3
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
CAS7
DQ0
DQ1
DQ2
DQ3
DQ0
DQ1
DQ2
DQ3
DQ27
DQ28
DQ29
DQ30
DQ31
DQ32
DQ33
DQ34
DQ0
DQ1
DQ2
DQ3
DQ0
DQ1
DQ2
DQ3
DQ63
DQ64
DQ65
DQ66
DQ67
DQ68
DQ69
DQ70
DQ0
DQ1
DQ2
DQ3
DQ0
DQ1
DQ2
DQ3
DQ54
DQ55
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ0
DQ1
DQ2
DQ3
DQ0
DQ1
DQ2
DQ3
DQ45
DQ46
DQ47
DQ48
DQ49
DQ50
DQ51
DQ52
U8
DQ0
DQ1
DQ2
DQ3
DQ0
DQ1
DQ2
DQ3
DQ36
DQ37
DQ38
DQ39
DQ40
DQ41
DQ42
DQ43
U1
U9
CAS1
U2
U10
U3
U11
CAS2
U4
U12
U5
U13
CAS3
U6
U14
U7
U15
NOTE : A12 is used for only M364C1680BJ(T)0 (8K Ref.)
A0
B0
A1-A11(A12)
W0, OE0
W2, OE2
U0-U7
U8-U15
U0-U15
U0-U7
U8-U15
Vcc
Vss
0.1 or 0.22uF Capacitor
under each DRAM
To all DRAMs
DRAM MODULE
ABSOLUTE MAXIMUM RATINGS *
Item
Voltage on any pin relative V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
D
I
OS
M364C160(8)0BJ(T)0-C
Rating
-1 to +7.0
-1 to +7.0
-55 to +125
16
50
Unit
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70°C)
Item
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
4.5
0
2.4
-1.0
*2
Typ
5.0
0
-
-
Max
5.5
0
V
CC*1
0.8
Unit
V
V
V
V
*1 : V
CC
+2.0V at pulse width≤20ns, which is measured at V
CC
.
*2 : -2.0V at pulse width≤20ns, which is measured at V
SS
.
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
Symbol
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Speed
-50
-60
Don′t care
-50
-60
-50
-60
Don′t care
-50
-60
Don′t care
Don′t care
M364C1600BJ(T)0
Min
-
-
M364C1680BJ(T)0
Min
-
-
-
-
-
-
-
-
-
-
-10
-5
2.4
-
Max
1440
1280
100
1440
1280
960
800
30
1920
1760
10
5
-
0.4
Max
1920
1760
100
1920
1760
1120
960
30
1920
1760
10
5
-
0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
-
-
-
-
-
-
-
-
-10
-5
2.4
-
I
CC1
* : Operating Current * (RAS, CAS, Address cycling @
t
RC
=min)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
I
CC4
* : Fast Page Mode Current * (RAS=V
IL
, CAS cycling :
t
PC
=min)
I
CC5
: Standby Current (RAS=CAS=W=Vcc-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
I(
IL)
: Input Leakage Current (Any input 0≤V
IN
≤Vcc+0.5V,
all other pins not under test=0 V)
I(
OL)
: Output Leakage Current(Data Out is disabled, 0V≤V
OUT
≤Vcc)
V
OH
: Output High Voltage Level (I
OH
= -5mA)
V
OL
: Output Low Voltage Level (I
OL
= 4.2mA)
* NOTE
: I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one Fast page mode cycle time,
t
PC
.
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

M364C1680BJ0-C50 Related Products

M364C1680BJ0-C50 M364C1680BJ0-C60 M364C1600BT0-C60 M364C1600BJ0-C60 M364C1600BJ0-C50 M364C1600BT0-C50 M364C1680BT0-C60 M364C1680BT0-C50
Description Fast Page DRAM Module, 16MX64, 50ns, CMOS, DIMM-168 Fast Page DRAM Module, 16MX64, 60ns, CMOS, DIMM-168 Fast Page DRAM Module, 16MX64, 60ns, CMOS, DIMM-168 Fast Page DRAM Module, 16MX64, 60ns, CMOS, DIMM-168 Fast Page DRAM Module, 16MX64, 50ns, CMOS, DIMM-168 Fast Page DRAM Module, 16MX64, 50ns, CMOS, DIMM-168 Fast Page DRAM Module, 16MX64, 60ns, CMOS, DIMM-168 Fast Page DRAM Module, 16MX64, 50ns, CMOS, DIMM-168
Maker SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG
Parts packaging code DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM
package instruction DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168
Contacts 168 168 168 168 168 168 168 168
Reach Compliance Code compli compliant compliant compliant compliant compliant compliant compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE
Maximum access time 50 ns 60 ns 60 ns 60 ns 50 ns 50 ns 60 ns 50 ns
Other features RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-XDMA-N168 R-XDMA-N168 R-XDMA-N168 R-XDMA-N168 R-XDMA-N168 R-XDMA-N168 R-XDMA-N168 R-XDMA-N168
memory density 1073741824 bi 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bi
Memory IC Type FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE
memory width 64 64 64 64 64 64 64 64
Number of functions 1 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1 1
Number of terminals 168 168 168 168 168 168 168 168
word count 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words
character code 16000000 16000000 16000000 16000000 16000000 16000000 16000000 16000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 16MX64 16MX64 16MX64 16MX64 16MX64 16MX64 16MX64 16MX64
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM
Encapsulate equivalent code DIMM168 DIMM168 DIMM168 DIMM168 DIMM168 DIMM168 DIMM168 DIMM168
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 8192 8192 4096 4096 4096 4096 8192 8192
Maximum standby current 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A
Maximum slew rate 1.92 mA 1.76 mA 1.76 mA 1.76 mA 1.92 mA 1.92 mA 1.76 mA 1.92 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL

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