Silicon Schottky Diode
BAT 17-07
q
q
For mixer applications in the VHF/UHF range
For high-speed switching
Type
Ordering Code
(tape and reel)
Q62702-A918
Pin Configuration
1
2
3
4
C1
C2
A2
A1
Marking
Package
BAT 17-07
57
SOT-143
Maximum Ratings
Parameter
Reverse voltage
Forward current
Total power dissipation
T
S
≤
60
°C
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
Junction-ambient
1)
Junction-soldering point
Symbol
Values
4
130
150
150
– 55 … + 150
– 55 … + 150
Unit
V
mA
mW
°C
°C
°C
V
R
I
F
P
tot
T
j
T
op
T
stg
R
th JA
R
th JS
≤
750
≤
590
K/W
K/W
1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm
2
Cu.
Semiconductor Group
1
10.94
BAT 17-07
Electrical Characteristics
at
T
A
= 25
°C,
unless otherwise specified.
Parameter
Symbol
min.
DC Characteristics
Breakdown voltage
I
R
= 10
µA
Reverse current
V
R
= 3 V
V
R
= 3 V,
T
A
= 60
°C
V
R
= 4 V
Forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
Diode capacitance
V
R
= 0 V
f
= 1 MHz
Differential forward resistance
I
F
= 5 mA,
f
= 10 kHz
Value
typ.
max.
Unit
V
(BR)
4
–
–
–
–
275
340
425
0.75
8
–
V
µA
–
–
–
0.25
1.25
10
mV
200
750
350
350
450
600
pF
–
1
Ω
–
15
I
R
V
F
C
T
r
S
Semiconductor Group
2
BAT 17-07
Forward current
I
F
=
f
(
V
F
)
Reverse current
I
R
=
f
(
V
R
)
Diode capacitance
C
T
=
f
(
V
R
)
f
= 1 MHz
Differential forward resistance
R
F
=
f
(
I
F
)
f
= 10 kHz
Semiconductor Group
3
BAT 17-07
Forward current
I
F
=
f
(
T
A
;
T
S
*)
*Package mounted on aluminum
Semiconductor Group
4
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