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BAT17DS

Description
SILICON, UHF BAND, MIXER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size78KB,1 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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BAT17DS Overview

SILICON, UHF BAND, MIXER DIODE

ADVANCED INFORMATION
ADVANCED INFORMATION
BAT17 and BAT17DS
SCHOTTKY DIODES
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
FEATURES
¨
¨
¨
¨
¨
¨
¨
¨
¨
Low turn-on voltage
Low capacitance
Ultrafast switching
Microminiature plastic package
Single, double, and ring balanced mixer in
narrow-band receivers up to 1 GHz
Detectors and fast switching up to 1 GHz
Phase detectors
Suitable for radios, TV, CTV, and hyperband tuners
These diodes are also available in case styles SOD-123
with type designation BAT17W, and SOD-323 with type
designation BAT17WS.
Top View
1
2
max. .004 (0.1)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
.045 (1.15)
.037 (0.95)
MECHANICAL DATA
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
Marking Code:
L7 for BAT17, L72 for BAT17DS
BAT 17
BAT 17DS
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
VALUE
UNIT
Minimum Reverse Breakdown Voltage at 10mA
Forward Current
Power Dissipation T
C
= 25¡C
Maximum Leakage Current
at V
R
= 3V
at V
R
= 3V, Tamb = 60¡C
Maximum Forward Voltage
at I
F
= 10 mA
Maximum Diodes Capacitance
at V
R
= 0 V, f = 1 MH
Z
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
V
R
I
F
P
tot
4
30
150
(NOTE 1)
Volts
mA
mW
mA
mA
mV
I
R
I
R
0.25
1.25
V
F
600
C
D
R
thja
T
j
T
S
1.0
500
(NOTE 1)
125
-65 to + 150
pF
¡C/W
¡C
¡C
1/28/99

BAT17DS Related Products

BAT17DS BAT17
Description SILICON, UHF BAND, MIXER DIODE SILICON, UHF BAND, MIXER DIODE

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