BAT41
Schottky Diodes
DO-35
min. 1.083 (27.5)
FEATURES
♦
For general purpose applications
♦
This diode featutres low turn-on voltage
max.
∅
.079 (2.0)
max. .150 (3.8)
and high breakdown voltage. This device
is protected by a PN junction guard ring
against excessive voltage, such as electro-
static discharges.
with type designation LL41.
Cathode
Mark
min. 1.083 (27.5)
♦
This diode is also available in a MiniMELF case
max.
∅
.020 (0.52)
MECHANICAL DATA
Dimensions in inches and (millimeters)
Case:
DO-35 Glass Case
Weight:
approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Repetitive Peak Reverse Voltage
Forward Continuous Current at T
amb
= 25 °C
Repetitive Peak Forward Current
at t
p
< 1 s, @ < 0.5, T
amb
= 25 °C
Surge Forward Current
at t
p
= 10 ms, T
amb
= 25 °C
Power Dissipation, T
amb
= 25 °C
Junction Temperature
Ambient Operating Temperature Range
Storage Temperature Range
1)
Value
100
100
1)
350
1)
750
1)
400
1)
125
–65 to +125
–65 to +150
Unit
V
mA
mA
mA
mW
°C
°C
°C
V
RRM
I
F
I
FRM
I
SFM
P
tot
T
j
T
amb
T
S
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
4/98
BAT41
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Test Conditions
Reverse Breakdown Voltage
tested with 100
µA
/ 300
µs
Pulses
Forward Voltage
Pulse Test t
p
= 300
µs
at I
F
= 1 mA
at I
F
= 200 mA
Leakage Current
Pulse Test t
p
= 300
µs
at V
R
= 50 V, at T
j
= 25 °C
at V
R
= 50 V, at T
j
= 100 °C
Capacitance
at V
R
= 1 V, f = 1 MHz
Reverse Recovery Time
from I
F
= 10 mA, to I
R
= 10 mA to I
R
= 1 mA
R
L
= 100 Ohm
Thermal Resistance
Junction to Ambient Air
1)
Symbol
V
(BR)R
Min.
100
Typ.
110
Max.
–
Unit
V
V
F
V
F
–
–
0.40
–
0.45
1.0
V
V
I
R
I
R
C
tot
t
rr
–
–
–
–
–
–
2
5
100
20
–
–
nA
µA
pF
ns
R
thJA
–
–
300
1)
K/W
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
Analogue and Mixed Signal
京公网安备 11010802033920号
EEWORLD
