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BAT42WS-T3

Description
0.1 A, 30 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size25KB,2 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric Compare View All

BAT42WS-T3 Overview

0.1 A, 30 V, SILICON, SIGNAL DIODE

BAT42WS-T3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWon-Top Electronics Co., Ltd.
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.4 V
JESD-609 codee0
Maximum non-repetitive peak forward current4 A
Number of components1
Maximum operating temperature150 °C
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
WTE
POWER SEMICONDUCTORS
BAT42WS / BAT43WS
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
!
!
!
Low Turn-on Voltage
A
SOD-323
Dim
Min
2.30
1.75
1.15
0.25
0.05
0.70
0.30
Max
2.70
1.95
1.35
0.35
0.15
0.95
A
B
C
D
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
!
Designed for Surface Mount Application
C
!
Plastic Material – UL Recognition Flammability
Classification 94V-O

E
D
B
G
Mechanical Data
!
!
!
!
!
Case: SOD-323, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.004 grams (approx.)
Marking: BAT42WS L2
BAT43WS L3
@T
A
=25°C unless otherwise specified
E
G
H
All Dimensions in mm
H
Maximum Ratings
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Repetitive Peak Forward Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t < 1.0s
@ t < 10ms
Symbol
V
RRM
V
RWM
V
R
I
F
I
FRM
I
FSM
P
d
R
JA
T
j
, T
STG
BAT42WS / BAT43WS
Unit
30
200
500
4.0
200
625
-55 to +125
V
mA
mA
A
mW
K/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage
@T
A
=25°C unless otherwise specified
Symbol
V
(BR)R
BAT42WS
Min
30
Typ
Max
0.4
Unit
V
Test Condition
@ I
RS
= 100µA
@ I
F
= 1.0mA
Forward Voltage
BAT42WS
BAT43WS
BAT43WS
V
F
1.0
0.33
1.0
V
@ I
F
= 200mA
@ I
F
= 2.0mA
@ I
F
= 200mA
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
I
R
C
j
t
rr
0.5
10
5.0
µA
pF
nS
@ V
R
= 25V
V
R
= 1.0V, f = 1.0MHz
I
F
= I
R
= 10mA,
I
RR
= 0.1 x I
R
, R
L
= 100
Note: 1. Valid provided that terminals are kept at ambient temperature.
BAT42WS / BAT43WS
1 of 2
© 2002 Won-Top Electronics

BAT42WS-T3 Related Products

BAT42WS-T3 BAT43WS-T3
Description 0.1 A, 30 V, SILICON, SIGNAL DIODE 0.1 A, 30 V, SILICON, SIGNAL DIODE
Is it Rohs certified? incompatible incompatible
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.4 V 0.33 V
JESD-609 code e0 e0
Maximum non-repetitive peak forward current 4 A 4 A
Number of components 1 1
Maximum operating temperature 150 °C 150 °C
Maximum repetitive peak reverse voltage 30 V 30 V
Maximum reverse recovery time 0.005 µs 0.005 µs
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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