BAT42, BAT43
Schottky Diodes
DO-35
min. 1.083 (27.5)
FEATURES
♦
For general purpose applications
♦
These diodes feature very low turn-
max.
∅
.079 (2.0)
max. .150 (3.8)
on voltage and fast switching. These
devices are protected by a PN junction
guard ring against excessive voltage, such
as electrostatic discharges.
case with the type designations BAT42W to BAT43W
and in the MiniMELF case with type
designations LL42 to LL43.
Cathode
Mark
min. 1.083 (27.5)
♦
These diodes are also available in the SOD-123
max.
∅
.020 (0.52)
MECHANICAL DATA
Dimensions in inches and (millimeters)
Case:
DO-35 Glass Case
Weight:
approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Repetitive Peak Reverse Voltage
Forward Continuous Current at T
amb
= 25 °C
Repetitive Peak Forward Current
at t
p
< 1 s,
δ
< 0.5, T
amb
= 25 °C
Surge Forward Current at t
p
< 10 ms, T
amb
= 25 °C
Power Dissipation
1)
at T
amb
= 65 °C
Junction Temperature
Ambient Operating Temperature Range
Storage Temperature Range
1)
Value
30
200
1)
500
1)
4
1)
200
1)
125
–65 to +125
–65 to +150
Unit
V
mA
mA
A
mW
°C
°C
°C
V
RRM
I
F
I
FRM
I
FSM
P
tot
T
j
T
amb
T
S
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
4/98
BAT42, BAT43
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Reverse Breakdown Voltage
tested with 100
µA
Pulses
Forward Voltage
Pulse Test t
p
< 300
µs, δ
< 2%
at I
F
= 200 mA
at I
F
= 10 mA
at I
F
= 50 mA
at I
F
= 2 mA
at I
F
= 15mA
Leakage Current
Pulse Test t
p
< 300
µs, δ
< 2%
at V
R
= 25 V
at V
R
= 25 V, T
j
= 100 °C
Capacitance
at V
R
= 1 V, f = 1 MHz
Reverse Recovery Time
from I
F
= 10 mA through I
R
= 10 mA to I
R
= 1 mA,
R
L
= 100
Ω
Detection Efficiency
at R
L
= 15 KΩ, C
L
= 300 pF,
f = 45 MHz, V
RF
= 2 V
Thermal Resistance Junction to Ambient Air
1)
Min.
30
Typ.
–
Max.
–
Unit
V
V
(BR)R
BAT42
BAT42
BAT43
BAT43
V
F
V
F
V
F
V
F
V
F
–
–
–
0.26
–
–
–
–
–
–
1
0.4
0.65
0.33
0.45
V
V
V
V
V
I
R
I
R
C
tot
t
rr
–
–
–
–
–
–
7
–
0.5
100
–
5
µA
µA
pF
ns
η
v
80
–
–
%
R
thJA
–
–
0.3
1)
K/mW
Valid provided that leads at a distance of 4 mm from the case are kept at ambient temperature
Power technology
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