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BAT46

Description
0.075 A, 100 V, SILICON, SIGNAL DIODE, DO-35
Categorysemiconductor    Discrete semiconductor   
File Size48KB,1 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BAT46 Overview

0.075 A, 100 V, SILICON, SIGNAL DIODE, DO-35

BAT46
SCHOTTKY BARRIER DIODE
Features
·
·
·
High Reverse Breakdown Voltage
Low Turn-On Voltage
Guard Ring Construction for Transient
Protection
A
B
A
D
C
Mechanical Data
·
·
·
·
·
Case: DO-35, Plastic
Leads: Solderable per MIL-STD-202,
Method 208
Marking: Type Number
Polarity: Cathode Band
Weight: 0.13 grams (approx.)
DO-35
Dim
A
B
C
D
Min
25.40
¾
¾
¾
Max
¾
4.00
0.60
2.00
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
I
FM
I
O
@ t
£
1.0s
I
FRM
I
FSM
P
d
R
qJA
T
j
, T
STG
BAT46
100
150
75
350
750
200
500
-55 to +125
Unit
V
mA
mA
mA
mA
mW
K/W
°C
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Repetitive Peak Forward Current (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Non-Repetitive Peak Forward Surge Current @ t = 10ms
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
Min
100
Typ
¾
Max
¾
0.5
5.0
0.8
7.5
2.0
15
5.0
20
0.25
0.45
1.00
¾
Unit
V
Test Condition
I
RS
= 10mA (pulses)
V
R
= 1.5V
V
R
= 1.5V, T
j
= 60°C
V
R
= 10V
V
R
= 10V, T
j
= 60°C
V
R
= 50V
V
R
= 50V, T
j
= 60°C
V
R
= 75V
V
R
= 75V, T
j
= 60°C
I
F
= 0.1mA
I
F
= 10mA
I
F
= 250mA
V
R
= 0V, f = 1.0MHz
V
R
= 1.0V, f = 1.0MHz
Reverse Leakage Current (Note 2)
I
R
¾
¾
mA
Forward Voltage Drop (Note 2)
Junction Capacitance
Notes:
V
F
C
j
¾
¾
¾
10
6.0
V
pF
1. Valid provided that electrodes are kept at ambient temperature.
2. t < 300ms, Duty Cycle < 2%.
DS11002 Rev. E-2
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