SFT210DETXV datasheet, PDF - EEWORLD Datasheet

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SFT210DETXV: DescriptionSmall Signal Field-Effect Transistor, TO-72, TO-72, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size110KB，2 Pages; ManufacturerSSDI; Websitehttp://www.ssdi-power.com/

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SFT210DETXV Overview

Small Signal Field-Effect Transistor, TO-72, TO-72, 4 PIN

SFT210DETXV Parametric

Parameter Name	Attribute value
Maker	SSDI
Parts packaging code	TO-72
package instruction	CYLINDRICAL, O-MBCY-W4
Contacts	4
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	SUBSTRATE
Configuration	SINGLE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	0.05 A
Maximum drain-source on-resistance	70 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.5 pF
JEDEC-95 code	TO-72
JESD-30 code	O-MBCY-W4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	0.3 W
Maximum power dissipation(Abs)	1.2 W
Certification status	Not Qualified
Guideline	MIL-19500
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFT210DE

50 mA, 30 Volt, 1 nsec

High Speed Analog

N-Channel DMOSFET switch

•

DESIGNER’S DATA SHEET

Part Number / Ordering Information

1/

SFT210 DE __

│ │

2/

│ └

Screening __

= Not Screened

│

TX = TX Level

│

TXV = TXV Level

│

S = S Level

└

Package

DE = TO-72

Features:

Ultra-High Speed Switching – t

ON

= 1 ns

Ultra-Low Reverse Capacitance: 0.2pF

Low Guaranteed r

DS

@ 5V

Low Turn-On Threshold Voltage

N-Channel Enhancement Mode

Replacement for SD210DE

TX, TXV, and S-Level Screening Available. Consult

2/

Factory.

Maximum Ratings

Drain – Source Breakdown Voltage

Source – Drain Voltage

Gate - Drain Voltage

Gate - Source Voltage

Gate – Body (substrate) Voltage

Drain – Body (substrate) Voltage

Source – Body (substrate) Voltage

Drain Current

Power Dissipation

Maximum Thermal Resistance

Lead Temperature

T

A

= 25

o

C

T

C

= 25

o

C

Junction to Ambient

Junction to Case

Symbol

V

DS

V

SD

V

GD

V

GS

V

Gb

V

Db

V

Sb

I

D

P

D

R

ΘJA

R

ΘJC

T

L

T

OP

T

STG

Max

30

10

+40

+30

30

15

50

300

1.2

335

85

300

-55 to +125

-65 to +150

Units

Volts

mA

mWatts

Watts

ºC/W

ºC

(1/16” from case for 10 seconds)

Operating & Storage Temperature

PACKAGE OUTLINE: TO-72

PIN ASSIGNMENT

PIN 1

PIN 2

PIN 3

PIN 4

Source

Drain

Gate

Body

(Substrate)

NOTE:

All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0035A

DOC

SFT210DETXV Related Products

	SFT210DETXV	SFT210DES	SFT210DETX
Description	Small Signal Field-Effect Transistor, TO-72, TO-72, 4 PIN	Small Signal Field-Effect Transistor, TO-72, TO-72, 4 PIN	Small Signal Field-Effect Transistor, TO-72, TO-72, 4 PIN
Parts packaging code	TO-72	TO-72	TO-72
package instruction	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4
Contacts	4	4	4
Reach Compliance Code	compli	compliant	compli
JEDEC-95 code	TO-72	TO-72	TO-72
JESD-30 code	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4
Number of terminals	4	4	4
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maker	SSDI	-	SSDI
ECCN code	EAR99	-	EAR99
Shell connection	SUBSTRATE	-	SUBSTRATE
Configuration	SINGLE	-	SINGLE
Minimum drain-source breakdown voltage	30 V	-	30 V
Maximum drain current (ID)	0.05 A	-	0.05 A
Maximum drain-source on-resistance	70 Ω	-	70 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.5 pF	-	0.5 pF
Number of components	1	-	1
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE
Maximum operating temperature	125 °C	-	125 °C
Minimum operating temperature	-55 °C	-	-55 °C
Polarity/channel type	N-CHANNEL	-	N-CHANNEL
Maximum power consumption environment	0.3 W	-	0.3 W
Maximum power dissipation(Abs)	1.2 W	-	1.2 W
Guideline	MIL-19500	-	MIL-19500
transistor applications	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	-	SILICON

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