DG441L/442L
Vishay Siliconix
Precision Monolithic Quad SPST
Low-Voltage CMOS Analog Switches
FEATURES
D
2.7- thru 12-V Single Supply or
"3-
thru
"6-Dual
Supply
D
On-Resistance—r
DS(on)
: 17
W
D
Fast Switching—t
ON
: 20 ns
—t
OFF
: 12 ns
D
TTL, CMOS Compatible
D
Low Leakage: 0.25 nA
D
2000-V ESD Protection
BENEFITS
D
D
D
D
Widest Dynamic Range
Low Signal Errors and Distortion
Break-Before-Make Switching Action
Simple Interfacing
APPLICATIONS
D
D
D
D
D
D
D
Precision Automatic Test Equipment
Precision Data Acquisition
Communication Systems
Battery Powered Systems
Computer Peripherals
SDSL, DSLAM
Audio and Video Signal Routing
DESCRIPTION
The DG441L/442L are low voltage pin-for-pin compatible
companion devices to the industry standard DG441L/442L
with improved performance
Combining high speed (t
ON
: 20 ns), flat r
DS(on)
over the analog
signal range (5
W),
minimal insertion lose (- 3 dB at 280 MHz),
and excellent crosstalk and off-isolation performance ( - 50 dB
at 50 MHz), the DG441L/442L are ideally suited for audio and
video signal switching.
The DG441L/442L responds to opposite control logic as
shown in the Truth Table. open and two normally closed
switches.
Using BiCMOS wafer fabrication technology allows the
DG441L/442L to operate on single and dual supplies. Single
supply voltage ranges from 3 to 12 V while dual supply
operation is recommended with
"3
to
"6
V.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Dual-In-Line, TSSOP and SOIC
TRUTH TABLE
IN
2
D
2
S
2
V+
NC
16-Pin
16 Pin TSSOP
S
3
D
3
16-Pin
16 Pin CerDIP
IN
3
-40 to 85_C
40
16-Pin
16 Pin Narrow SOIC
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
16
15
14
13
Logic
0
1
DG441L
ON
OFF
Logic “0”
v
0.8 V
Logic “1”
w
2.4 V
DG442L
OFF
ON
ORDERING INFORMATION
Temp Range
Package
Part Number
DG441LDQ
DG442LDQ
DG441LDY
DG442LDY
DG441LAK, DG441LAK/883
DG442LAK, DG442LAK/883
DG441LAZ/883
LCC-20
LCC 20
DG442LAZ/883
-55 to 125_C
55
DG441L/442L
Top View
12
11
10
9
Document Number: 71399
S-03294—Rev. D, 17-Mar-03
www.vishay.com
1
DG441L/442L
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to 13 V
GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Digital Inputs
a
V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . . GND -0.3 to (V+ + 0.3 V)
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature:
(DQ, DY Suffix) . . . . . . . . . . . . . . . . . . -65 to 125_C
(AK Suffix) . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C
Power Dissipation (Package)b
16-Pin TSSOP
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW
16-Pin Narrow Body SOIC
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW
16-Pin CerDIP
e
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 7 mW/_C above 75_C
d. Derate 7.6 mW/_C above 75_C
e. Derate 12 mW/_C above 75_C
SPECIFICATIONS
a
(SINGLE SUPPLY 12 V)
Test Conditions
Unless Specified
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
On-Resistance
Match Between Channels
e
Switch Off
Leakage Current
Channel On
Leakage Current
V
ANALOG
r
DS(on)
Dr
DS(on)
I
S(off)
V
D
= 1/11 V V
S
= 11/1 V
V,
I
D(off)
I
D(on)
V
S
= V
D
= 11/1 V
V+ = 10.8 V, V - = 0 V
I
S
= 10 mA, V
D
= 2/9 V
I
S
= 10 mA, V
D
= 9 V
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
20
0
12
30
45
0.5
-1
-15
-1
-15
-1
-15
1
15
1
15
1
15
-1
-10
-1
-10
-1
-10
0
12
30
40
0.5
1
10
1
10
1
10
nA
V
A Suffix Limits
-55 to 125_C
D Suffix Limits
-40 to 85_C
Symbol
V+ = 12 V, V - = 0 V
V
IN
= 2.4 V, 0.8 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
W
0.1
Digital Control
Input Current, V
IN
Low
Input Current, V
IN
High
I
IL
I
IH
V
IN
Under Test = 0.8 V
V
IN
Under Test = 2.4 V
Full
Full
0.01
-1.5
-1.5
1.5
1.5
-1
-1
1
1
mA
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
e
Off Isolation
e
Channel-to-Channel
Crosstalk
e
Source Off Capacitance
e
Drain Off
Capacitance
e
Channel On Capacitance
e
t
ON
t
OFF
Q
OIRR
X
TALK
C
S(off)
C
D(off)
C
D(on)
f = 1 MHz
R
L
= 300
W
, C
L
= 35 pF
V
S
= 5 V See Figure 2
V
g
= 0 V, R
g
= 0
W
, C
L
= 10 nF
R
L
= 50
W
, C
L
= 5 pF
pF,
f = 1 MHz
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
20
12
5
71
95
5
6
15
p
pF
dB
60
80
35
50
60
70
35
45
ns
pC
Power Supplies
Positive Supply Current
Negative Supply Current
Ground Current
I+
I-
I
GND
V
IN
= 0 or 12 V
Full
Room
Full
Full
0.03
-0.002
-0.002
-1
-7.5
-1.5
1.5
-1
-5
-1
Document Number: 71399
S-03294—Rev. D, 17-Mar-03
1
mA
www.vishay.com
2
DG441L/442L
Vishay Siliconix
SPECIFICATIONS
a
(DUAL SUPPLY
"5
V)
Test Conditions
Unless Specified
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
On-Resistance
Match BetweenChannels
e
Switch Off
Leakage Current
g
Channel On
Leakage Current
g
V
ANALOG
r
DS(on)
Dr
DS(on)
I
S(off)
I
D(off)
I
D(on)
V+ = 5 V, V - = -5 V
I
S
= 10 mA, V
D
=
"3.5
V
I
S
= 10 mA, V
D
=
"3.5
V
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
20
0.1
-1
-15
-1
-15
-1
-15
-5
5
33
45
0.5
1
15
1
15
1
15
-1
-10
-1
-10
-1
-10
-5
5
33
40
0.5
1
10
1
10
1
10
nA
V
A Suffix Limits
-55 to 125_C
D Suffix Limits
-40 to 85_C
Symbol
V+ = 5 V, V - = -5 V
V
IN
= 2.4 V, 0.8 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
W
V+ = 5.5 V, V - = -5.5 V
V
D
=
"4.5
V, V
S
=
#4.5
V
V+ = 5.5 V, V - = -5.5 V
V
S
= V
D
=
"4.5
V
Digital Control
Input Current, V
IN
Low
e
Input Current, V
IN
High
e
I
IL
I
IH
V
IN
Under Test = 0.8 V
V
IN
Under Test = 2.4 V
Full
Full
0.05
0.05
-1.5
-1.5
1.5
1.5
-1
-1
1
1
mA
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
e
Off
Isolation
e
Channel-to-Channel
Crosstalk
e
Source Off Capacitance
e
Drain Off
Capacitance
e
Capacitance
e
Channel On
t
ON
t
OFF
Q
OIRR
X
TALK
C
S(off)
C
D(off)
C
D(on)
f = 1 MHz
R
L
= 300
W
, C
L
= 35 pF
V
S
=
"3.5
V See Figure 2
V
g
= 0 V, R
g
= 0
W
, C
L
= 10 nF
R
L
= 50
W
, C
L
= 5 pF
pF,
f = 1 MHz
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
21
16
5
68
85
9
9
20
p
pF
dB
60
83
35
55
60
70
35
45
ns
pC
Power Supplies
Positive Supply Current
e
Negative Supply Current
e
Ground Current
e
I+
I-
I
GND
V
IN
= 0 or 5 V
Full
Room
Full
Full
0.002
-0.002
-0.002
-1
-7.5
-1.5
1.5
-1
-5
-1
1
mA
SPECIFICATIONS
a
(SINGLE SUPPLY 5 V)
Test Conditions
Unless Specified
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
e
On-Resistance
Match Between Channels
e
V
ANALOG
r
DS(on)
Dr
DS(on)
V+ = 4.5 V, I
S
= 5 mA
V
D
= 1 V, 3.5 V
I
S
= 5 mA, V
D
= 3.5 V
Full
Room
Full
Room
35
0.5
0
5
50
88
1.0
0
5
50
75
1.0
V
A Suffix Limits
-55 to 125_C
D Suffix Limits
-40 to 85_C
Symbol
V+ = 5 V, V - = 0 V
V
IN
= 2.4 V, 0.8 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
W
Dynamic Characteristics
Turn-On Time
e
Turn-Off
Time
e
t
ON
t
OFF
R
L
= 300
W
, C
L
= 35 pF
V
S
= 3.5 V, See Figure 2
Room
Hot
Room
Hot
27
15
50
90
30
55
50
60
30
40
ns
Document Number: 71399
S-03294—Rev. D, 17-Mar-03
www.vishay.com
3
DG441L/442L
Vishay Siliconix
SPECIFICATIONS
a
(SINGLE SUPPLY 5 V)
Test Conditions
Unless Specified
Parameter
Charge Injection
e
A Suffix Limits
-55 to 125_C
D Suffix Limits
-40 to 85_C
Symbol
Q
V+ = 5 V, V - = 0 V
V
IN
= 2.4 V, 0.8 V
f
Temp
b
Room
Typ
c
0.5
Min
d
Max
d
Min
d
Max
d
Unit
pC
Dynamic Characteristics
V
g
= 0 V, R
g
= 0
W
, C
L
= 10 nF
Power Supplies
Positive Supply Current
e
Negative Supply Current
e
Ground Current
e
I+
I-
I
GND
V
IN
= 0 or 5 V
Full
Room
Full
Full
10
-0.002
-10
-1
-7.5
-200
200
-1
-5
-100
100
mA
SPECIFICATIONS
a
(SINGLE SUPPLY 3 V)
Test Conditions
Unless Specified
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
On-Resistance
Match Between Channels
e
Switch Off
Leakage Current
g
Channel On
Leakage Current
g
V
ANALOG
r
DS(on)
Dr
DS(on)
I
S(off)
I
D(off)
I
D(on)
V+ = 2.7 V, V - = 0 V
I
S
= 5 mA, V
D
= 0.5, 2.2 V
I
S
= 5 mA, V
D
= 2.2 V
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
65
0
3
80
115
3.0
-1
-15
-1
-15
-1
-15
1
15
1
15
1
15
-1
-10
-1
-10
-1
-10
0
3
80
100
3.0
1
10
1
10
1
10
nA
V
A Suffix Limits
-55 to 125_C
D Suffix Limits
-40 to 85_C
Symbol
V+ = 3 V, V - = 0 V
V
IN
= 0.4 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
W
1.0
V+ = 3.3 V, V - = 0 V
V
D
= 1, 2 V, V
S
= 2, 1 V
V+ = 3.3 V, V - = 0 V
V
S
= V
D
= 1, 2 V
Digital Control
Input Current, V
IN
Low
e
Input Current, V
IN
High
e
I
IL
I
IH
V
IN
Under Test = 0.4 V
V
IN
Under Test = 2.4 V
Full
Full
0.005
0.005
-1.5
-1.5
1.5
1.5
-1
-1
1
1
mA
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
e
Off
Isolation
e
t
ON
t
OFF
Q
OIRR
X
TALK
C
S(off)
C
D(off)
C
D(on)
f = 1 MHz
R
L
= 300
W
, C
L
= 35 pF
V
S
= 1.5 V See Figure 2
V
g
= 0 V, R
g
= 0
W
, C
L
= 10 nF
R
L
= 50
W
, C
L
= 5 pF
pF,
f = 1 MHz
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
50
30
1
68
85
6
6
20
p
pF
dB
136
175
100
140
136
151
100
125
ns
pC
Channel-to-Channel
Crosstalk
e
Source Off Capacitance
e
Drain Off Capacitance
e
Channel On
Capacitance
e
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
V
IN
= input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
www.vishay.com
Document Number: 71399
S-03294—Rev. D, 17-Mar-03
4
DG441L/442L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
DS(on)
vs. Drain Voltage
(Single Supply)
100
50
V+ = 5 V
V- = 0 V
r
DS(on)
- On-Resistance (
W
)
80
V
CC
= 2.7 V
60
r
DS(on)
- On-Resistance (
W
)
40
A
B
30
C
D
20
A=125_C
B= 85_C
C= 25_C
D= -40_C
E= -55_C
E
r
DS(on)
vs. Drain Voltage and Temperature
(Single Supply)
40
V
CC
= 4.5 V
20
V
CC
= 12 V
10
0
0
3
6
Drain Voltage (V)
9
12
0
0
1
2
3
4
5
Drain Voltage (V)
r
DS(on)
vs. Drain Voltage and Temperature
(Dual Supply)
35
V" =
"5
V
r
DS(on)
- On-Resistance (
W
)
28
A
21
B
C
14
A=125_C
B= 85_C
C= 25_C
D= -40_C
E= -55_C
-5
-3
-1
1
3
5
D
E
I
S
, I
D
Leakage Current (pA)
20
30
Leakage Current vs. Analog Voltage
(Dual Supply)
V+ = 5 V
V - = -5 V
10
I
D(on)
0
I
S(off)
I
D(off)
-10
7
-20
0
Drain Voltage (V)
-30
-5
-3
-1
1
3
5
V
D
or V
S
- Drain-Source Voltage
Switching Time vs. Single Supply
50
45
Switching Time vs. Dual Supply
40
Switching Speed (nS)
Switching Speed (nS)
t
ON
30
36
27
t
OFF
t
ON
20
t
OFF
10
18
9
0
0
3
6
9
12
15
0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
V" Positive Supply Voltage (V)
V" Positive Supply Voltage (V)
Document Number: 71399
S-03294—Rev. D, 17-Mar-03
www.vishay.com
5
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