®
Z04 Series
4A TRIAC
S
STANDARD
MAIN FEATURES:
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT (Q
1
)
Value
4
600 to 800
3 to 25
Unit
A
V
mA
G
A2
A1
DESCRIPTION
The Z04 series is suitable for general purpose AC
switching applications. They can be found in
applications such as touch light dimmers, fan
controllers, HID lamp ignitors,...
Different gate current sensitivities are available,
allowing optimized performances when controlled
directly from microcontrollers.
A1
A2
G
TO202-3
(Z04xxF)
ABSOLUTE MAXIMUM RATINGS
Symbol
I
T(RMS)
Parameter
RMS on-state current (full sine wave)
TI = 30°C
Tamb = 25°C
I
TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
F = 50 Hz
F = 60 Hz
t = 20 ms
t = 16.7 ms
Value
4
1
20
21
2.2
Tj = 125°C
Tj = 125°C
Tj = 125°C
20
1.2
0.2
- 40 to + 150
- 40 to + 125
A
²
s
A/µs
A
W
°C
A
Unit
A
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
tp = 10 ms
F = 120 Hz
tp = 20 µs
July 2003 - Ed: 5
1/6
Z04 Series
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
02
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
(dV/dt)c (2)
V
D
= 12 V
V
D
= V
DRM
I
T
= 50 mA
I
G
= 1.2 I
GT
I - III - IV
II
V
D
= 67 %V
DRM
gate open Tj = 110°C
(dI/dt)c = 1.8 A/ms
Tj = 110°C
MIN.
MIN.
R
L
= 30
Ω
R
L
= 3.3 kΩ Tj = 125°C
ALL
ALL
ALL
MAX.
MAX.
MIN.
MAX.
MAX.
3
6
12
10
0.5
5
10
15
20
1
3
Z04xx
05
5
1.3
0.2
10
15
25
100
2
25
25
50
200
5
V/µs
V/µs
09
10
10
25
mA
V
V
mA
mA
Unit
STATIC CHARACTERISTICS
Symbol
V
TM
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Test Conditions
I
TM
= 5.5 A
tp = 380 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
MAX.
Value
2.0
0.95
180
5
0.5
Unit
V
V
mΩ
µA
mA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
THERMAL RESISTANCES
Symbol
R
th(j-l)
R
th(j-a)
Junction to lead (AC)
Junction to ambient
Parameter
Value
15
100
Unit
°C/W
°C/W
2/6
Z04 Series
PRODUCT SELECTOR
Voltage
Part Number
600 V
Z0402MF
Z0402SF
Z0402NF
Z0405MF
Z0405SF
Z0405NF
Z0409MF
Z0409SF
Z0409NF
Z0410MF
Z0410SF
Z0410NF
X
X
X
X
X
X
X
X
X
X
X
X
700 V
800 V
3 mA
3 mA
3 mA
5 mA
5 mA
5 mA
10 mA
10 mA
10 mA
25 mA
25 mA
25 mA
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
TO202-3
TO202-3
TO202-3
TO202-3
TO202-3
TO202-3
TO202-3
TO202-3
TO202-3
TO202-3
TO202-3
TO202-3
Sensitivity
Type
Package
ORDERING INFORMATION
Z
TRIAC
SERIES
CURRENT: 4A
04 02
M F
VOLTAGE:
M: 600V
S: 700V
N: 800V
Blank
0AA2
PACKING MODE:
0AA2: Tube
1AA2: Bulk
PACKAGE:
F: TO202-3
SENSITIVITY:
02: 3mA
05: 5mA
09: 10mA
10: 25mA
OTHER INFORMATION
Part Number
Z04xxyF 0AA2
Z04xxyF 1AA2
Note:
xx = sensitivity, y = voltage
Marking
Z04xxyF
Z04xxyF
Weight
0.8 g
0.8 g
Base
quantity
50
250
Packing
mode
Tube
Bulk
3/6
Z04 Series
Fig. 1:
Maximum power dissipation versus RMS
on-state current (full cycle).
P(W)
7
6
5
4
3
2
1
0
0.0
0.5
1.0
IT(RMS)(A)
1.5
2.0
2.5
3.0
3.5
4.0
Fig. 2:
RMS on-state current versus ambient
temperature (full cycle).
IT(RMS)(A)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Rth(j-a)=Rth(j-l)
Rth(j-a)=100°C/W
Tamb(°C)
0
25
50
75
100
125
Fig. 3:
Relative variation of thermal impedance
junction to ambient versus pulse duration.
Fig. 4:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0
IGT
K=[Zth(j-a)/Rth(j-a)]
1E+0
1E-1
1.5
IH & IL
1E-2
tp(s)
1.0
0.5
Tj(°C)
1E-3
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.0
-40
-20
0
20
40
60
80
100
120
140
Fig. 5:
Surge peak on-state current versus
number of cycles.
Fig. 6:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
500
Tj initial=25°C
ITSM(A)
25
20
15
10
5
0
Number of cycles
Repetitive
Tamb=25°C
Non repetitive
Tj initial=25°C
t=20ms
One cycle
100
dI/dt limitation:
20A/µs
ITSM
10
I²t
tp (ms)
1000
1
10
100
1
0.01
0.10
1.00
10.00
4/6
Z04 Series
Fig. 7:
values).
On-state
characteristics
(maximum
Fig. 8:
Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
ITM(A)
20.0
10.0
Tj=Tj max.
Z0410
1.0
Tj=25°C
Tj max.
Vto= 0.95 V
Rd= 180 mW
Z0402
Z0405
Z0409
VTM(V)
(dV/dt)c (V/µs)
1.0
10.0
100.0
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 9:
Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
0
0
25
50
Tj (°C)
75
100
125
5/6
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