DG611/612/613
Vishay Siliconix
High-Speed, Low-Glitch D/CMOS Analog Switches
FEATURES
D
D
D
D
D
D
D
Fast Switching— t
ON
: 12 ns
Low Charge Injection:
"2
pC
Wide Bandwidth: 500 MHz
5-V CMOS Logic Compatible
Low r
DS(on)
: 18
W
Low Quiescent Power : 1.2 nW
Single Supply Operation
BENEFITS
D
D
D
D
D
D
Improved Data Throughput
Minimal Switching Transients
Improved System Performance
Easily Interfaced
Low Insertion Loss
Minimal Power Consumption
APPLICATIONS
D
D
D
D
D
D
D
D
Fast Sample-and-Holds
Synchronous Demodulators
Pixel-Rate Video Switching
Disk/Tape Drives
DAC Deglitching
Switched Capacitor Filters
GaAs FET Drivers
Satellite Receivers
DESCRIPTION
The DG611/612/613 feature high-speed low-capacitance
lateral DMOS switches. Charge injection has been minimized
to optimize performance in fast sample-and-hold applications.
switching FETs with low-power CMOS control logic and
drivers. An epitaxial layer prevents latchup.
The DG611 and DG612 differ only in that they respond to
opposite logic levels. The versatile DG613 has two normally
open and two normally closed switches. It can be given various
configurations, including four SPST, two SPDT, one DPDT.
For additional information see Applications Note AN207
(FaxBack number 70605).
Each switch conducts equally well in both directions when on
and blocks up to 16 V
p-p
when off. Capacitances have been
minimized to ensure fast switching and low-glitch energy. To
achieve such fast and clean switching performance, the
DG611/612/613 are built on the Vishay Siliconix proprietary
D/CMOS process. This process combines n-channel DMOS
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG611
IN
1
D
1
S
1
V–
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Dual-In-Line
and SOIC
Top View
16
15
14
13
12
11
10
9
IN
2
D
2
S
2
V+
V
L
S
3
D
3
IN
3
9
10
Key
S
1
V–
NC
GND
S
4
4
5
6
7
8
3
2
DG611
D
1
IN
1
NC IN
2
D
2
1
20
19
18
17
LCC
Top View
16
15
14
11
12 13
S
2
V+
NC
V
L
S
3
Four SPST Switches per Package
TRUTH TABLE
Logic
0
1
DG611
ON
OFF
Logic “0”
v
1 V
Logic “1”
w
4 V
DG612
OFF
ON
D
4
IN
4
NC IN
3
D
3
Document Number: 70057
S-00399—Rev. G, 13-Sep-99
www.vishay.com
S
FaxBack 408-970-5600
4-1
DG611/612/613
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG613
IN
1
D
1
S
1
V–
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Dual-In-Line
and SOIC
Top View
16
15
14
13
12
11
10
9
IN
2
D
2
S
2
V+
NC
V
L
S
3
D
3
IN
3
GND
S
4
Key
S
1
V–
4
5
6
7
8
9
10
11 12
13
LCC
Top View
15
14
3
2
DG613
D
1
IN
1
NC
1
IN
2
D
2
19
18
17
16
S
2
V+
20
Four SPST Switches per Package
TRUTH TABLE
Logic
SW
1
, SW
4
OFF
ON
Logic “0”
v
1 V
Logic “1”
w
4 V
NC
0
V
L
S
3
1
SW
2
, SW
3
ON
OFF
D
4
IN
4
NC IN
3
D
3
ORDERING INFORMATION
Temp Range
DG611/612
16-Pin Plastic DIP
–40 to 85 C
40 85_C
16-Pin Narrow SOIC
DG611DJ
DG612DJ
DG611DY
DG612DY
DG611AK/883, 5962-9325501MEA
DG612AK/883, 5962-9325502MEA
DG611AZ/883, 5962-9325501M2A
DG612AZ/883, 5962-9325502M2A
Package
Part Number
16-Pin CerDIP
–55 to 125 C
55 125_C
LCC-20
DG613
–40 to 85_C
16-Pin Plastic DIP
16-Pin Narrow SOIC
16-Pin CerDIP
LCC-20
DG613DJ
DG613DY
DG613AK/883, 5962-9325503MEA
DG613AZ/883, 5962-9325503M2A
–55 to 125_C
ABSOLUTE MAXIMUM RATINGS
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 21 V
V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 21 V
V– to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –19 V to 0.3 V
V
L
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –1 V to (V+) + 1 V
or 20 mA, whichever occurs first
V
INa
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –1 V to (V+) + 1 V
or 20 mA, whichever occurs first
V
S
, V
D
a
Storage Temperature:
CerDIP . . . . . . . . . . . . . . . . . . . . . –65 to 150_C
Plastic . . . . . . . . . . . . . . . . . . . . . . –65 to 125_C
470 mW
600 mW
900 mW
900 mW
Power Dissipation (Package)b
16-Pin Plastic DIP
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin Narrow SOIC
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin CerDIP
e
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20-Pin LCC
e
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –0.3 V to (V–) + 16 V
or 20 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . .
"30
mA
Current, S or D (Pulsed at 1
ms,
10% Duty Cycle) . . . . . . . . . . . . .
"100
mA
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 75_C
d. Derate 7.6 mW/_C above 75_C
e. Derate 12 mW/_C above 75_C
RECOMMENDED OPERATING RANGE
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 V to 21 V
V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10 V to 0 V
V
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 V to V+
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V
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to V
L
V
ANALOG
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V– to (V+) – 5 V
4-2
Document Number: 70057
S-00399—Rev. G, 13-Sep-99
DG611/612/613
Vishay Siliconix
SPECIFICATIONS
a
Test Conditions
Unless Otherwise Specified
Parameter
P
Analog Switch
Analog Signal Range
e
Switch On-Resistance
Resistance
Match Bet Ch.
Source Off Leakage
Drain Off
Leakage Current
Switch On
Leakage Current
V
ANALOG
r
DS(on)
I
S
= –1 mA, V
D
= 0 V
Dr
DS(on)
I
S(off)
I
D(off)
I
D(on)
V
S
= 0 V, V
D
= 10 V
V
S
= 10 V, V
D
= 0 V
V
S
= V
D
= 0 V
V– = –5 V, V+ = 12 V
Full
Room
Full
Room
Room
Hot
Room
Hot
Room
Hot
18
–5
7
45
60
–5
7
45
60
V
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Symbol
S b l
V+
V = 15 V, V– = –3 V
V V
3
V
L
= 5 V, V
IN
= 4 V, 1 V
f
Temp
b
T
Typ
T
c
Min
d
Max
d
Min
d
Max
d
U i
Unit
W
2
"0.001
"0.001
"0.001
–0.25
–20
–0.25
–20
–0.4
–40
0.25
20
0.25
20
0.4
40
–0.25
–20
–0.25
–20
–0.4
–40
0.25
20
0.25
20
0.4
40
nA
A
Digital Control
Input Voltage High
Input Voltage Low
Input Current
Input Capacitance
V
IH
V
IL
I
IN
C
IN
Full
Full
Room
Hot
Room
0.005
5
–1
–20
4
1
1
20
–1
–20
4
1
1
20
V
mA
pF
Dynamic Characteristics
Off State Input Capacitance
Off State Output Capacitance
On State Input Capacitance
Bandwidth
Turn-On Time
e
Turn-Off Time
e
Turn-On Time
Turn-Off Time
Charge Injection
e
Ch. Injection Change
e, g
Off Isolation
e
Crosstalk
e
C
S(off)
C
D(off)
C
S(on)
BW
t
ON
t
OFF
t
ON
t
OFF
Q
DQ
OIRR
X
TALK
V
S
= 0 V
V
D
= 0 V
V
S
= V
D
= 0 V
R
L
= 50
W
R
L
= 300
W
, C
L
= 3 pF, V
S
=
"2
V
p ,
S T t Ci it Figure 2
See Test Circuit, Fi
R
L
= 300
W
, C
L
= 75 pF
V
S
=
"2
V
See Test Circuit, Figure 2
C
L
= 1 nF, V
S
= 0 V
C
L
= 1 nF,
b
V
S
b
v
3 V
R
IN
= 50
W
, R
L
= 50
W
f = 5 MHz
R
IN
= 10
W
, R
L
= 50
W
, f = 5 MHz
Room
Room
Room
Room
Room
Room
Room
Full
Room
Full
Room
Room
Room
Room
3
2
10
500
12
8
19
16
4
3
74
87
4
4
pC
25
20
35
50
25
35
25
20
35
50
25
35
ns
MHz
pF
F
dB
Power Supplies
Positive
Supply Curent
Negative
Supply Current
Logic Supply Current
Ground Current
I+
I–
V
IN
= 0 V or 5 V
I
L
I
GND
Room
Full
Room
Full
Room
Full
Room
Full
0.005
–0.005
0.005
–0.005
–1
–5
–1
–5
1
5
–1
–5
1
5
–1
–5
1
5
1
5
A
mA
Document Number: 70057
S-00399—Rev. G, 13-Sep-99
www.vishay.com
S
FaxBack 408-970-5600
4-3
DG611/612/613
Vishay Siliconix
SPECIFICATIONS
a
FOR UNIPOLAR SUPPLIES
Test Conditions
Unless Otherwise Specified
Parameter
P
Analog Switch
Analog Signal Range
e
Switch On-Resistance
V
ANALOG
r
DS(on)
I
S
= –1 mA, V
D
= 1 V
Full
Room
25
0
7
60
0
7
60
V
W
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Symbol
S b l
V+ = 15 V, V– = –3 V
V
L
= 5 V, V
IN
= 4 V, 1 V
f
Temp
b
T
Typ
T
c
Min
d
Max
d
Min
d
Max
d
Unit
U i
Dynamic Characteristics
Turn-On Time
e
Turn-Off Time
e
t
ON
t
OFF
R
L
= 300
W
, C
L
= 3 pF, V
S
= 2 V
p ,
See Test Circuit, Fi
S T t Ci it Figure 2
Room
Room
15
10
30
25
30
ns
25
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
e. Guaranteed by design, not subject to production test.
f.
V
IN
= input voltage to perform proper function.
g.
DQ
=
b
Q at V
S
= 3 V – Q at V
S
= –3 V
b
.
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Document Number: 70057
S-00399—Rev. G, 13-Sep-99
DG611/612/613
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
DS(on)
vs. V
D
and Power Supply Voltages
400
r DS(on) Drain-Source On-Resistance (
W
)
–
350
300
250
200
150
100
50
0
–5 –4
–2
0
2
4
6
V
D
– Drain Voltage (V)
8
10
12
V+ = 5 V
V– = –5 V
V+ = 15 V
V– = –3 V
V+ = 12 V
V– = –5 V
r DS(on) Drain-Source On-Resistance (
W
)
–
I
S
= –1 mA
400
350
300
250
200
150
25_C
100
50
0
–4
–2
0
2
4
6
8
V
D
– Drain Voltage (V)
10
12
125_C
–55_C
V+ = 15 V
V– = –3 V
I
S
= –1 mA
r
DS(on)
vs. V
D
and Temperature
Leakage Current vs. Analog Voltage
3
V+ = 15 V
V– = –3 V
I S(off), I D(off)– Leakage (A)
10 nA
1 nA
Leakage Currents vs. Temperature
2
I S, I D – Leakage Current (pA)
1
I
S(off),
I
D(off)
0
100 pA
I
D(on)
10 pA
I
S(off),
I
D(off)
–1
I
D(on)
–2
1 pA
–3
–4
–2
0
2
4
6
8
V
D
or V
S
– Drain or Source Voltage (V)
10
0.1 pA
–55
–25
0
25
50
Temperature (_C)
75
100
125
6
Input Switching Threshold vs. V
L
24
V+ = 15 V
V– = –3 V
22
20
18
Switching Times vs. Temperature
5
V TH – Logic Input Voltage (V)
t
ON
4
Time (ns)
16
14
12
10
8
6
V+ = 15 V
V– = –3 V
R
L
= 300
W
C
L
= 10 pF
t
OFF
3
2
1
4
2
0
0
5
10
15
V
L
– Logic Supply Voltage (V)
0
–55
–35
–15
5
25
45
65
85
105
125
Temperature (_C)
Document Number: 70057
S-00399—Rev. G, 13-Sep-99
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