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SI4884

Description
TrenchMOS⑩ logic level FET
CategoryDiscrete semiconductor    The transistor   
File Size79KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

SI4884 Overview

TrenchMOS⑩ logic level FET

SI4884 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)12 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.5 W
surface mountYES
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
SI4884
TrenchMOS™ logic level FET
M3D315
Rev. 02 — 12 April 2002
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
SI4884 in SOT96-1 (SO8).
1.2 Features
s
Low on-state resistance
s
Fast switching.
1.3 Applications
s
DC to DC converters
s
Portable equipment applications.
1.4 Quick reference data
s
V
DS
= 30 V
s
P
tot
= 2.5 W
s
I
D
= 12 A
s
R
DSon
= 16.5 mΩ.
2. Pinning information
Table 1:
Pin
1,2,3
4
5,6,7,8
Pinning - SOT96-1, simplified outline and symbol
Description
source (s)
gate (g)
drain (d)
g
1
Top view
4
MBK187
Simplified outline
8
5
Symbol
d
MBB076
s
SOT96-1 (SO8)
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