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BAT54RALT1

Description
Schottky Barrier Diodes
CategoryDiscrete semiconductor    diode   
File Size53KB,2 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric View All

BAT54RALT1 Overview

Schottky Barrier Diodes

BAT54RALT1 Parametric

Parameter NameAttribute value
MakerLRC
Reach Compliance Codeunknow
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.24 V
Maximum operating temperature150 °C
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
LESHAN RADIO COMPANY, LTD.
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switch-
ing applications, circuit protection, and voltage clamping. Extremely
low forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ I
F
= 10 mAdc
BAT54RALT1
30 VOLTS
SCHOTTKY BARRIER
DETECTOR AND
SWITCHING
DIODES
3
3
ANODE
1
CATHODE
2
CATHODE
1
2
CASE 318–08, STYLE 12
SOT–23 (TO–236AB)
DEVICE MARKING
BAT54RALT1 = B6
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Operating Junction
Temperature Range
Storage Temperature Range
Symbol
V
R
P
F
225
1.8
T
J
T
stg
Max
30
Unit
Volts
mW
mW/°C
°C
°C
–55 to +150
–55 to +150
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Reverse Breakdown Voltage (I
R
= 10
µA)
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 25 V)
Forward Voltage (I
F
= 0.1 mAdc)
Forward Voltage (I
F
= 30 mAdc)
Forward Voltage (I
F
= 100 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc) Figure 1
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage (I
F
= 10 mAdc)
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
V
F
t
rr
V
F
V
F
Min
30
Typ
7.6
0.5
0.22
0.41
0.52
0.29
0.35
Max
10
2.0
0.24
0.5
1.0
5.0
0.32
0.40
Unit
Volts
pF
µAdc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
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