BAT54S datasheet, PDF - EEWORLD Datasheet

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BAT54S: Description0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size85KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAT54S Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	R-PDSO-G3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOW NOISE
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	0.6 A
Number of components	2
Number of terminals	3
Maximum operating temperature	125 °C
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	0.33 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	30 V
Maximum reverse current	4 µA
Maximum reverse recovery time	0.005 µs
surface mount	YES
technology	SCHOTTKY
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10

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BAT54 SERIES

1

SOT23 SILICON EPITAXIAL

SCHOTTKY BARRIER DIODES

ISSUE 1 SEPTEMBER 1995

7

1

TYPICAL CHARACTERISTICS

1

2

1

10m

3

+125°C

+85°C

100m

1m

10m

1m

+125°C

+85°C

+25°C

100

µ

3

2

3

2

3

BAT54

SINGLE

+25°C

BAT54A

COMMON

ANODE

L42

L44

SERIES

BAT54S

BAT54C

COMMON

CATHODE

L43

Device Type

Pin Configuration

Partmarking Detail

100

µ

1

µ

0

10

µ

10

µ

L4Z

10

30

20

0

Forward Voltage V

F

(V)

0.15

0.3

0.45

0.6

0.75

0.9

IF v VF Characteristics

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Continuous Reverse Voltage

Forward Current

Forward Voltage @ I

F

=10mA

Repetitive Peak Forward Current

Non Repetitive Forward Current t<1s

Power Dissipation at T

amb

=25°C

0

I

R

v V

R

Characteristics

Reverse Voltage V

R

(V)

FEATURES

: Low V

F

& High Current Capability

APPLICATIONS

: PSU, Mobile Telecomms & SCSI

SYMBOL

V

R

I

F

V

F

I

FRM

I

FSM

P

tot

T

stg

¤

T

j

VALUE

30

200

400

300

600

330

-55 to +150

125

UNIT

V

mA

mV

mA

mW

°C

15

330

270

10

180

5

90

0

CT v VR Characteristics

PD v TA Characteristics

Reverse Voltage VR (V)

10

20

30

0

TA - Ambient Temperature ( °C)

50

100

150

Storage Temperature Range

JunctionTemperature

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Reverse Breakdown

Voltage

Forward Voltage

SYMBOL

V

(BR)R

V

F

MIN.

30

TYP.

50

135

200

280

350

530

Reverse Current

Diode Capacitance

Reverse Recover

Time

I

R

C

D

t

rr

2.5

7.5

240

320

400

500

1000

4

10

5

MAX. UNIT

V

mV

µ

A

CONDITIONS.

I

R

=10

µ

A

I

F

=0.1mA

I

F

=1mA

I

F

=10mA

I

F

=30mA

I

F

=100mA

V

R

=25V

pF

ns

f=1MHz,V

R

=1V

switched from

I

F

=10mA to I

R

=10mA

R

L

=100

Ω

, Measured

at I

R

=1mA

¤ Dual Device; For simultaneous continuous use T

j

=100°C.

3-4

3-5

BAT54S Related Products

	BAT54S	BAT54	BAT54A	BAT54C
Description	0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.2 A, 30 V, SILICON, SIGNAL DIODE	0.3 A, 2 ELEMENT, SILICON, SIGNAL DIODE	0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Is it Rohs certified?	conform to	conform to	conform to	conform to
package instruction	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Reach Compliance Code	compli	compli	compliant	compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SINGLE	COMMON ANODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V	1 V
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1
Maximum non-repetitive peak forward current	0.6 A	0.6 A	0.6 A	0.6 A
Number of components	2	1	2	2
Number of terminals	3	3	3	3
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Maximum output current	0.2 A	0.2 A	0.2 A	0.2 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260
Maximum power dissipation	0.33 W	0.33 W	0.33 W	0.33 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	30 V	30 V	30 V	30 V
Maximum reverse current	4 µA	4 µA	4 µA	4 µA
Maximum reverse recovery time	0.005 µs	0.005 µs	0.005 µs	0.005 µs
surface mount	YES	YES	YES	YES
technology	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	10	10	10	40

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