UG58GR0G datasheet, PDF - EEWORLD Datasheet

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UG58GR0G: DescriptionRectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, DO-201AD,; CategoryDiscrete semiconductor diode; File Size393KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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UG58GR0G Overview

Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, DO-201AD,

UG58GR0G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
Reach Compliance Code	compli
ECCN code	EAR99
Other features	FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS
application	ULTRA FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	2.1 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	65 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	5 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	30 µA
Maximum reverse recovery time	0.02 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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UG58G

5.0AMPS. Ultra Fast Rectifiers

DO-201AD

Features

High current capability

High reliability

High surge current capability

Low power loss

For use in switching power supply PFC diode,

Free wheeling, and polarity protection application

Green compound with suffix "G" on packing

code & prefix "G" on datecode

Mechanical Data

Case: Molded plastic

Epoxy: UL 94V-0 rate flame retardant

Lead: Pure tin plated, lead free, solderable

per MIL-STD-202, Method 208 guaranteed

Polarity: As marked

Solder dip 260℃ max.10s per JESD 22-B106

Weight: 1.2 grams

Maximum Ratings and Electrical Characteristics

Rating at 25

℃

ambient temperature unless otherwise specified.

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave

Superimposed on Rated Load (JEDEC method)

Maximum Instantaneous Forward Voltage

@ 5 A / T

=25℃

@ 5 A / T

=125℃

Maximum DC Reverse Current at Rated

DC Blocking Voltage (Note 1)

Maximum Reverse Recovery Time (Note 2)

Typical Thermal Resistance

Operating Temperature Range

Storage Temperature Range

Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle

=25

℃

=125

℃

Symbol

RRM

RMS

F(AV)

FSM

UG58G

600

420

600

Unit

2.1

1.5

200

- 55 to + 150

Trr

θjL

STG

C/W

Note 2: Reverse Recovery Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

Version:A13

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Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS	FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS	FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS	FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS	FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS	FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS
application	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	2.1 V	2.1 V	2.1 V	2.1 V	2.1 V	2.1 V	2.1 V	2.1 V
JEDEC-95 code	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	65 A	65 A	65 A	65 A	65 A	65 A	65 A	65 A
Number of components	1	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	5 A	5 A	5 A	5 A	5 A	5 A	5 A	5 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	600 V	600 V	600 V	600 V	600 V	600 V	600 V	600 V
Maximum reverse current	30 µA	30 µA	30 µA	30 µA	30 µA	30 µA	30 µA	30 µA
Maximum reverse recovery time	0.02 µs	0.02 µs	0.02 µs	0.02 µs	0.02 µs	0.02 µs	0.02 µs	0.02 µs
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

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