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BAT54WS-T3

Description
0.1 A, 30 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size25KB,2 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric View All

BAT54WS-T3 Overview

0.1 A, 30 V, SILICON, SIGNAL DIODE

BAT54WS-T3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWon-Top Electronics Co., Ltd.
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.32 V
JESD-609 codee0
Maximum non-repetitive peak forward current0.6 A
Number of components1
Maximum operating temperature150 °C
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
WTE
POWER SEMICONDUCTORS
BAT54WS
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
!
!
!
Low Turn-on Voltage
A
SOD-323
Dim
Min
2.30
1.75
1.15
0.25
0.05
0.70
0.30
Max
2.70
1.95
1.35
0.35
0.15
0.95
A
B
C
D
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
!
Designed for Surface Mount Application
C
!
Plastic Material – UL Recognition Flammability
Classification 94V-O

E
D
B
G
Mechanical Data
!
!
!
!
!
Case: SOD-323, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.004 grams (approx.)
Marking: L4
@T
A
=25°C unless otherwise specified
E
G
H
All Dimensions in mm
H
Maximum Ratings
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Repetitive Peak Forward Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t < 1.0s
Symbol
V
RRM
V
RWM
V
R
I
F
I
FRM
I
FSM
P
d
R
JA
T
j
, T
STG
Value
Unit
30
200
300
600
200
625
-55 to +125
V
mA
mA
mA
mW
K/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage
Forward Voltage (Note 2)
Reverse Leakage Current (Note 2)
Junction Capacitance
Reverse Recovery Time
@T
A
=25°C unless otherwise specified
Symbol
V
(BR)R
V
F
I
R
C
j
t
rr
Min
30
Typ
Max
0.32
1.0
2.0
10
5.0
Unit
V
V
µA
pF
nS
Test Condition
@ I
RS
= 100µA
@ I
F
= 1.0mA
@ I
F
= 100mA
@ V
R
= 25V
V
R
= 1.0V, f = 1.0MHz
I
F
= 10mA through I
R
= 10mA to
I
R
= 1.0mA, R
L
= 100
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. t < 300µs, duty cycle < 2%.
BAT54WS
1 of 2
© 2002 Won-Top Electronics

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